CPH5871 D

CPH5871
Power MOSFET
30V, 52mΩ, 3.5A, Single N-Channel
with Schottky Diode
Features
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VDSS
• Composite Type with a N-channel Sillicon MOSFET and a
Schottky Barrier Diode Contained in One Package
Facilitating High-density Mounting
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
[MOSFET] • High Speed Switching
[MOSFET] • 1.8V Drive
[SBD]
• Short Reverse Recovery Time
[SBD]
• Low Forward Voltage
[MOSFET]
RDS(on) Max
52mΩ@ 4.5V
ID Max
74mΩ@ 2.5V
3.5A
30V
132mΩ@ 1.8V
Electrical Connection
N-Channel
5
4
3
Specifications
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
[MOSFET]
VDSS
30
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
3.5
A
IDP
14
A
PD
0.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +125
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
1
2
Packing Type : TL
When mounted on ceramic substrate
(600mm2 × 0.8mm) 1unit
YZ
Power Dissipation
Marking
TL
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
35
V
Average Output Current
IO
1
A
10
A
Surge Forward Current
50Hz sine wave, 1cycle
IFSM
Junction Temperature
Tj
−55 to +125
°C
Storage Temperature
Tstg
−55 to +125
°C
Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
Junction to Ambient
When mounted on ceramic substrate
(600mm2 × 0.8mm) 1unit
RθJA
138.8
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 2
1
Publication Order Number :
CPH5871/D
LOT No.
Drain to Source Voltage
CPH5871
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Value
Conditions
min
typ
Unit
max
[MOSFET]
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
30
1
μA
V
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
1.3
V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
0.4
Forward Transconductance
gFS
VDS=10V, ID=2A
2.0
RDS(on)1
ID=2A, VGS=4.5V
40
52
mΩ
Static Drain to Source On-State Resistance
RDS(on)2
ID=1A, VGS=2.5V
53
74
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
82
132
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
3.4
S
430
pF
59
pF
Crss
38
pF
td(on)
10
ns
Rise Time
tr
41
ns
Turn-OFF Delay Time
td(off)
36
ns
Fall Time
tf
37
ns
Total Gate Charge
Qg
4.7
nC
Gate to Source Charge
Qgs
0.8
nC
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
IS=3.5A, VGS=0V
VR
IR=0.5mA
VF1
VF2
VDS=10V, f=1MHz
See specified Test Circuit
VDS=15V, VGS=4.5V, ID=3.5A
1.1
nC
0.8
1.2
V
IF=0.7A
0.45
0.5
V
IF=1A
0.48
0.53
V
15
μA
[SBD]
Reverse Voltage
Forward Voltage
30
Reverse Current
IR
VR=16V
Interterminal Capacitance
C
VR=10V, f=1MHz, 1cycle
Reverse Recovery Time
trr
IF= IR=100mA, See specified Test Circuit
V
27
pF
10
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
trr Test Circuit
(MOSFET)
(SBD)
VDD=15V
VIN
4.5V
0V
ID=2A
RL=7.5Ω
D
50Ω
VOUT
PW=10μs
D.C.≤1%
100Ω
10μs
G
10Ω
100mA
VIN
10mA
100mA
Duty≤10%
--5V
trr
P.G
50Ω
S
CPH5871
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CPH5871
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CPH5871
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CPH5871
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5
CPH5871
Package Dimensions
CPH5871-TL-H / CPH5871-TL-W
CPH5
CASE 318BC
ISSUE O
unit : mm
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Recommended
Soldering Footprint
2.4
1.4
0.6
0.95
0.95
ORDERING INFORMATION
Device
CPH5871-TL-H
CPH5871-TL-W
Package
Shipping
Note
CPH5
SC-74A, SOT-25
3,000 pcs. / Tape & Reel
Pb-Free
and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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