2N7002E D

2N7002E
Small Signal MOSFET
60 V, 310 mA, Single, N−Channel, SOT−23
Features
•
•
•
•
Low RDS(on)
Small Footprint Surface Mount Package
Trench Technology
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(on) MAX
ID MAX
(Note 1)
60 V
3.0 W @ 4.5 V
310 mA
2.5 W @ 10 V
Applications
•
•
•
•
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
Simplified Schematic
N−Channel
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
Rating
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State
t<5s
ID
1
mA
TA = 25°C
TA = 85°C
260
190
TA = 25°C
TA = 85°C
310
220
Power Dissipation (Note 1)
Steady State
t<5s
PD
Pulsed Drain Current (tp = 10 ms)
IDM
1.2
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
mW
3
300
420
Drain
3
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
703 MG
G
2
SOT−23
CASE 318
STYLE 21
1
2
Gate
Source
703
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction−to−Ambient − Steady State
(Note 1)
RqJA
417
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
300
April, 2016 − Rev. 4
Device
2N7002ET1G
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
© Semiconductor Components Industries, LLC, 2016
ORDERING INFORMATION
1
Package
Shipping†
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
2N7002E/D
2N7002E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
75
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1
TJ = 125°C
500
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.0
4.4
mV/°C
VGS = 10 V, ID = 240 mA
0.86
2.5
VGS = 4.5 V, ID = 50 mA
1.1
3.0
VDS = 5 V, ID = 200 mA
530
W
mS
CHARGES AND CAPACITANCES
CISS
Input Capacitance
26.7
VGS = 0 V, f = 1 MHz,
VDS = 25 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2.9
Total Gate Charge
QG(TOT)
0.81
Threshold Gate Charge
QG(TH)
0.31
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 5 V, VDS = 10 V;
ID = 240 mA
40
pF
4.6
nC
0.48
0.08
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
1.7
VGS = 10 V, VDD = 30 V,
ID = 200 mA, RG = 10 W
tf
1.2
4.8
3.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.79
TJ = 85°C
0.7
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
2N7002E
TYPICAL CHARACTERISTICS
4.0 V
1.2
3.5 V
0.8
3.0 V
0.4
2.5 V
2.0 V
0
2
4
TJ = 25°C
0.4
6
TJ = 125°C
0
TJ = −55°C
2
4
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.4
VGS = 4.5 V
TJ = 125°C
2.0
TJ = 85°C
1.6
TJ = 25°C
1.2
TJ = −55°C
0.8
0.4
0
0
0.8
0
0.2
0.4
0.6
0.8
1.0
1.2
2.4
VGS = 10 V
2.0
TJ = 125°C
1.6
TJ = 85°C
1.2
TJ = 25°C
0.8
TJ = −55°C
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
1.6
2.2
ID = 0.2 A
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.5 V
9.0 V
8.0 V
7.0 V
6.0 V
1.6
1.2
5.0 V
VGS = 10 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
2.0
ID = 250 mA
1.2
ID = 75 mA
0.8
0.4
2
4
6
8
1.8
VGS = 4.5 V
1.0
0.6
−50
10
VGS = 10 V
1.4
−25
0
25
50
75
100
125
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
www.onsemi.com
3
150
2N7002E
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
40
TJ = 25°C
VGS = 0 V
Ciss
30
20
Coss
10
Crss
0
0
4
8
12
16
TJ = 25°C
ID = 0.25 A
4
3
2
1
0
20
0
0.2
0.4
0.6
0.8
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
10
VGS = 0 V
IS, SOURCE CURRENT (A)
5
1
TJ = 85°C
TJ = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-60
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
-20
20
60
T, TEMPERATURE (°C)
100
Figure 10. Temperature versus Gate
Threshold Voltage
Figure 9. Diode Forward Voltage vs. Current
www.onsemi.com
4
1
140
2N7002E
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N7002E/D
Similar pages