Ordering number : ENA0225C 2SK4066 N-Channel Power MOSFET http://onsemi.com 60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L Features • • ON-resistance RDS(on)1=3.6mΩ(typ.) 4V drive • Input capacitance Ciss=12500pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 60 ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% PD V ±20 V 100 A 400 A 1.65 W 90 W Tc=25°C Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001 2SK4066-1E 2SK4066-DL-1E 1.4 3.0 3.0 1.75 8.0 1.3 5.3 0.9 1.2 1.75 5.3 4 0.9 9.2 7.9 1.2 1.3 4.5 10.0 7.9 8.0 9.2 13.4 4.5 10.0 0.254 1 2 3 0.8 13.08 1.27 1.27 0.8 0.5 2.54 2.54 0.5 2.54 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.4 1 : Gate 2 : Drain 3 : Source 0 to 0.25 2.4 1 2 3 1.35 1.47 2.54 TO-262-3L TO-263-2L Product & Package Information • Package : TO-262-3L • JEITA, JEDEC : TO-262 • Minimum Packing Quantity : 50pcs./magazine Marking • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800pcs./reel Packing Type : DL Electrical Connection 2, 4 K4066 LOT No. DL 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/12512 TKIM TC-00002698/71206/41006 MSIM TB-00002121/12506QA MSIM TB-00002052 No. A0225-1/9 2SK4066 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 850 mJ 70 A Avalanche Current *2 °C Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min typ Unit max V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=50A RDS(on)1 ID=50A, VGS=10V 3.6 4.7 mΩ RDS(on)2 ID=50A, VGS=4V 4.7 6.6 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 60 V VDS=60V, VGS=0V VGS=±16V, VDS=0V 1.2 1 μA ±10 μA 2.6 51 85 V S 12500 pF 1200 pF Crss 950 pF Turn-ON Delay Time td(on) 80 ns Rise Time tr 630 ns Turn-OFF Delay Time td(off) 860 ns Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See Fig.2 VDS=30V, VGS=10V, ID=100A ns 220 nC 31 nC 55 IS=100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=30V VIN ≥50Ω ID=50A RL=0.6Ω VIN 2SK4066 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V 750 D PW=10μs D.C.≤1% VOUT G 2SK4066 P.G 50Ω S Ordering Information Package Shipping 2SK4066-1E Device TO-262-3L 50pcs./magazine 2SK4066-DL-1E TO-263-2L 800pcs./reel memo Pb Free No. A0225-2/9 2SK4066 ID -- VDS 200 4V 6V 8V 80 VGS=3V 60 60 40 20 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS 1.8 12 11 10 9 8 7 Tc=75°C 5 25°C --25°C 4 3 2 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 3 °C -25 = °C Tc 75 2 10 7 5 3 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 2 3 IT10471 50A I D= , V A =4 =50 V GS V, I D 0 1 = V GS 6 5 4 3 2 1 0 25 2 tr 5 0.1 2 3 5 7 1.0 2 3 150 IT10470 10 7 5 3 2 1.0 7 5 3 2 0 0.3 0.6 0.9 1.2 1.5 IT10472 Ciss, Coss, Crss -- VDS f=1MHz 10k 7 5 3 2 Coss Crss 1k td(on) 7 125 2 Ciss, Coss, Crss -- pF 3 100 100 Ciss tf 5 75 VGS=0V 100 7 5 3 2 td(off) 1000 7 50 IS -- VSD 3 VDD=30V VGS=10V 2 --25 Diode Forward Voltage, VSD -- V SW Time -- ID 3 7 0.1 7 5 3 2 0.01 2 4.0 IT10468 8 3 2 °C 25 3.5 Case Temperature, Tc -- °C VDS=10V 100 7 5 3.0 9 IT10469 | yfs | -- ID 2.5 RDS(on) -- Tc 0 --50 10 Source Current, IS -- A 3 2.0 Gate-to-Source Voltage, VGS -- V 10 13 6 1.5 IT10467 ID=50A 14 1 0 0 1.0 2.0 Tc=7 5°C 25°C --25°C 0 15 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 40 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 100 25° --2 C 5°C 100 120 °C 120 140 Tc =7 5 140 0 Switching Time, SW Time -- ns Drain Current, ID -- A 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A 160 VDS=10V 180 10V 180 ID -- VGS 200 Tc=25°C 7 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT10473 5 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10474 No. A0225-3/9 2SK4066 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 150 200 10 7 5 3 2 PD -- Ta 1.5 1.0 0.5 10 0μ s μs s Operation in this area is limited by RDS(on). 1.0 7 5 3 2 Tc=25°C 2 3 5 7 10 2 3 5 7 100 IT10960 PD -- Tc 100 1.65 10 1m Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1 10 DC 00m ms op s era tio n ID=100A 100 7 5 3 2 IT10475 0 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT10482 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT10483 EAS -- Ta 120 Avalanche Energy derating factor -- % ≤10μs IDP=400A 0.1 Single pulse 2 3 5 7 1.0 0.1 250 Total Gate Charge, Qg -- nC 2.0 ASO 1000 7 5 3 2 VDS=30V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0225-4/9 2SK4066 Taping Specification 2SK4066-DL-1E No. A0225-5/9 2SK4066 Outline Drawing 2SK4066-DL-1E Land Pattern Example Mass (g) Unit 1.5 mm * For reference Unit: mm No. A0225-6/9 2SK4066 Magazine Specification 2SK4066-1E No. A0225-7/9 2SK4066 Outline Drawing 2SK4066-1E Mass (g) Unit 1.6 mm * For reference No. A0225-8/9 2SK4066 Note on usage : Since the 2SK4066 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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