2SK4066 D

Ordering number : ENA0225C
2SK4066
N-Channel Power MOSFET
http://onsemi.com
60V, 100A, 4.7mΩ, TO-262-3L/TO-263-2L
Features
•
•
ON-resistance RDS(on)1=3.6mΩ(typ.)
4V drive
•
Input capacitance Ciss=12500pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
60
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
PD
V
±20
V
100
A
400
A
1.65
W
90
W
Tc=25°C
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7537-001
7535-001
2SK4066-1E
2SK4066-DL-1E
1.4
3.0
3.0
1.75
8.0
1.3
5.3
0.9
1.2
1.75
5.3
4
0.9
9.2
7.9
1.2
1.3
4.5
10.0
7.9
8.0
9.2
13.4
4.5
10.0
0.254
1
2 3
0.8
13.08
1.27
1.27
0.8
0.5
2.54
2.54
0.5
2.54
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.4
1 : Gate
2 : Drain
3 : Source
0 to 0.25
2.4
1 2 3
1.35
1.47
2.54
TO-262-3L
TO-263-2L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
Marking
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Packing Type : DL
Electrical Connection
2, 4
K4066
LOT No.
DL
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/12512 TKIM TC-00002698/71206/41006 MSIM TB-00002121/12506QA MSIM TB-00002052 No. A0225-1/9
2SK4066
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
850
mJ
70
A
Avalanche Current *2
°C
Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Ratings
Conditions
min
typ
Unit
max
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID=50A
RDS(on)1
ID=50A, VGS=10V
3.6
4.7
mΩ
RDS(on)2
ID=50A, VGS=4V
4.7
6.6
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
60
V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
1.2
1
μA
±10
μA
2.6
51
85
V
S
12500
pF
1200
pF
Crss
950
pF
Turn-ON Delay Time
td(on)
80
ns
Rise Time
tr
630
ns
Turn-OFF Delay Time
td(off)
860
ns
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See Fig.2
VDS=30V, VGS=10V, ID=100A
ns
220
nC
31
nC
55
IS=100A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
10V
0V
1.2
V
VDD=30V
VIN
≥50Ω
ID=50A
RL=0.6Ω
VIN
2SK4066
VDD
50Ω
nC
0.9
Fig.2 Switching Time Test Circuit
L
10V
0V
750
D
PW=10μs
D.C.≤1%
VOUT
G
2SK4066
P.G
50Ω
S
Ordering Information
Package
Shipping
2SK4066-1E
Device
TO-262-3L
50pcs./magazine
2SK4066-DL-1E
TO-263-2L
800pcs./reel
memo
Pb Free
No. A0225-2/9
2SK4066
ID -- VDS
200
4V
6V
8V
80
VGS=3V
60
60
40
20
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- VGS
1.8
12
11
10
9
8
7
Tc=75°C
5
25°C
--25°C
4
3
2
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
3
°C
-25
=
°C
Tc
75
2
10
7
5
3
1.0
7
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain Current, ID -- A
5 7 100
2 3
IT10471
50A
I D=
,
V
A
=4
=50
V GS
V, I D
0
1
=
V GS
6
5
4
3
2
1
0
25
2
tr
5
0.1
2
3
5 7 1.0
2
3
150
IT10470
10
7
5
3
2
1.0
7
5
3
2
0
0.3
0.6
0.9
1.2
1.5
IT10472
Ciss, Coss, Crss -- VDS
f=1MHz
10k
7
5
3
2
Coss
Crss
1k
td(on)
7
125
2
Ciss, Coss, Crss -- pF
3
100
100
Ciss
tf
5
75
VGS=0V
100
7
5
3
2
td(off)
1000
7
50
IS -- VSD
3
VDD=30V
VGS=10V
2
--25
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
7
0.1
7
5
3
2
0.01
2
4.0
IT10468
8
3
2
°C
25
3.5
Case Temperature, Tc -- °C
VDS=10V
100
7
5
3.0
9
IT10469
| yfs | -- ID
2.5
RDS(on) -- Tc
0
--50
10
Source Current, IS -- A
3
2.0
Gate-to-Source Voltage, VGS -- V
10
13
6
1.5
IT10467
ID=50A
14
1
0
0
1.0
2.0
Tc=7
5°C
25°C
--25°C
0
15
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
40
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
100
25° --2
C 5°C
100
120
°C
120
140
Tc
=7
5
140
0
Switching Time, SW Time -- ns
Drain Current, ID -- A
160
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
160
VDS=10V
180
10V
180
ID -- VGS
200
Tc=25°C
7
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT10473
5
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT10474
No. A0225-3/9
2SK4066
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
50
100
150
200
10
7
5
3
2
PD -- Ta
1.5
1.0
0.5
10
0μ
s
μs
s
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
Tc=25°C
2
3
5 7 10
2
3
5 7 100
IT10960
PD -- Tc
100
1.65
10
1m
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1 10
DC 00m ms
op s
era
tio
n
ID=100A
100
7
5
3
2
IT10475
0
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT10482
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT10483
EAS -- Ta
120
Avalanche Energy derating factor -- %
≤10μs
IDP=400A
0.1 Single pulse
2 3
5 7 1.0
0.1
250
Total Gate Charge, Qg -- nC
2.0
ASO
1000
7
5
3
2
VDS=30V
ID=100A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A0225-4/9
2SK4066
Taping Specification
2SK4066-DL-1E
No. A0225-5/9
2SK4066
Outline Drawing
2SK4066-DL-1E
Land Pattern Example
Mass (g) Unit
1.5
mm
* For reference
Unit: mm
No. A0225-6/9
2SK4066
Magazine Specification
2SK4066-1E
No. A0225-7/9
2SK4066
Outline Drawing
2SK4066-1E
Mass (g) Unit
1.6
mm
* For reference
No. A0225-8/9
2SK4066
Note on usage : Since the 2SK4066 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0225-9/9
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