ENA0523 D

Ordering number : ENA0523B
2SK4094
N-Channel Power MOSFET
http://onsemi.com
60V, 100A, 5mΩ, TO-220-3L
Features
•
•
•
ON-resistance RDS(on)1=3.8mΩ (typ.)
Input capacitance Ciss=12500pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Unit
60
PW≤10μs, duty cycle≤1%
V
±20
V
100
A
400
A
1.75
W
Allowable Power Dissipation
PD
90
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
850
mJ
70
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1)
*2 L≤200μH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7536-001
• Package
: TO-220-3L
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
4.5
3.6
2SK4094-1E
2.8
1.3
(1.7)
10.0
1.3
Marking
Electrical Connection
2
8.9 MAX
13.3
15.7
(0.6)
9.2
K4094
LOT No.
1.27
0.8
13.08
3.0
1.52
1
0.5
3
2.4
1 2 3
2.54
1 : Gate
2 : Drain
3 : Source
2.54
TO-220-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/12512 TKIM TC-00002699/N0806QA SYIM TC-00000295 No. A0523-1/7
2SK4094
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
min
typ
Unit
max
60
ID=1mA, VGS=0V
VDS=60V, VGS=0V
V
1
μA
±10
μA
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=16V, VDS=0V
VDS=10V, ID=1mA
1.2
Forward Transfer Admittance
| yfs |
VDS=10V, ID=50A
45
RDS(on)1
ID=50A, VGS=10V
3.8
5.0
mΩ
RDS(on)2
ID=50A, VGS=4V
4.9
7.0
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
2.6
75
VDS=20V, f=1MHz
V
S
12500
pF
1200
pF
Reverse Transfer Capacitance
Crss
950
pF
Turn-ON Delay Time
td(on)
80
ns
Rise Time
tr
630
ns
Turn-OFF Delay Time
td(off)
860
ns
Fall Time
tf
750
ns
Total Gate Charge
Qg
220
nC
Gate-to-Source Charge
Qgs
30
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See Fig.2
VDS=30V, VGS=10V, ID=100A
55
IS=100A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
10V
0V
V
VDD=30V
VIN
≥50Ω
ID=50A
RL=0.6Ω
VIN
2SK4094
VDD
50Ω
1.2
Fig.2 Switching Time Test Circuit
L
10V
0V
nC
1.0
D
PW=10μs
D.C.≤1%
VOUT
G
2SK4094
P.G
50Ω
S
Ordering Information
Device
2SK4094-1E
Package
Shipping
memo
TO-220-3L
50pcs./magazine
Pb Free
No. A0523-2/7
2SK4094
6V
60
60
40
40
20
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- VGS
1.8
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
12
10
25°C
Tc=75°C
4
--25°C
2
0
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
| yfs | -- ID
2
=
Tc
10
7
5
5°C
--2
C
75°
3
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
7
5 7 100
IT11434
5
4
1
--25
0
25
2
tr
5
0.1
2
3
5 7 1.0
2
3
75
100
125
150
IT11559
IS -- VSD
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT11435
Ciss, Coss, Crss -- VDS
f=1MHz
2
10k
7
5
3
2
Coss
Crss
1k
td(on)
7
50
VGS=0V
Single pulse
3
Ciss, Coss, Crss -- pF
3
100
C
2
Ciss
tf
5
4.5
IT11431
3
td(off)
1000
7
4.0
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
2
3.5
50A
I D=
,
V
=4
A
=50
V GS
V, I D
0
1
=
V GS
6
0.1
7
5
3
2
0.01
SW Time -- ID
3
3.0
Case Temperature, Tc -- °C
2
1.0
7
0.1
2.5
8
3
2
°C
25
3
2.0
9
IT11558
VDS=10V
Single pulse
100
7
5
1.5
RDS(on) -- Tc
0
--50
10
Source Current, IS -- A
3
1.0
Gate-to-Source Voltage, VGS -- V
Single pulse
14
6
0.5
10
16
8
0
IT11430
ID=50A
Single pulse
18
0
2.0
--25°C
0
20
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
75°C
VGS=3V
100
Tc=7
5°C
25 ° C
80
120
25 °
C
100
140
Tc=
--25
°C
120
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
Drain Current, ID -- A
140
0
Switching Time, SW Time -- ns
180
160
10
V
Drain Current, ID -- A
160
VDS=10V
Single pulse
Tc=75°
C
--25°
C
4V
8V
180
ID -- VGS
200
Tc=25°C
Single pulse
25°
ID -- VDS
200
7
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT10473
5
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT10474
No. A0523-3/7
2SK4094
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
50
100
150
200
PD -- Ta
0.5
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
IT11548
EAS -- Ta
120
160
≤10μs 1
0μ
s
10
0μ
s
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
20
10
7
5
3
2
PD -- Tc
100
1.5
0
1m
s
1 10
DC 00m ms
s
op
era
tio
n
ID=100A
100
7
5
3
2
IT10475
1.75
0
IDP=400A
0.1
0.1
250
Total Gate Charge, Qg -- nC
2.0
ASO
1000
7
5
3
2
VDS=30V
ID=100A
3
5 7 100
IT10960
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT10483
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT11439
No. A0523-4/7
2SK4094
Magazine Specification
2SK4094-1E
No. A0523-5/7
2SK4094
Outline Drawing
2SK4094-1E
Mass (g) Unit
2.0
mm
* For reference
No. A0523-6/7
2SK4094
Note on usage : Since the 2SK4094 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0523-7/7
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