EN6546 D

Ordering number : EN6546C
3LN01SS
N-Channel Small Signal MOSFET
http://onsemi.com
30V, 0.15A, 3.7Ω, Single SSFP
Features
•
•
•
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
30
V
0.15
A
0.6
A
0.15
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
V
±10
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7029A-003
Device
3LN01SS-TL-E
3LN01SS-TL-H
1.4
0.1
3
0.8
0 to 0.02
0.3
1.4
0.3
0.25
1
2
Shipping
memo
3LN01SS-TL-E
SSFP
SC-81
8,000
pcs./reel
Pb-Free
3LN01SS-TL-H
SSFP
SC-81
8,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL
0.2
0.6
0.07
YA
LOT No.
0.07
Marking
LOT No.
0.45
Package
TL
1
2
3
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
SSFP
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002938/62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986 No.6546-1/6
3LN01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
VGS(off)
| yfs |
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
Ratings
min
typ
Unit
max
30
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
VDS=10V, ID=80mA
0.15
V
1
μA
±10
μA
1.3
0.22
V
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Ciss
Ω
7.0
pF
Output Capacitance
Coss
5.9
pF
Reverse Transfer Capacitance
Crss
2.3
pF
Turn-ON Delay Time
td(on)
tr
19
ns
65
ns
155
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
120
ns
1.58
nC
0.26
nC
0.31
IS=150mA, VGS=0V
0.87
nC
1.2
V
Switching Time Test Circuit
4V
0V
VDD=15V
VIN
VIN
PW=10μs
D.C.≤1%
D
ID=80mA
RL=187.5Ω
VOUT
G
3LN01SS
P.G
50Ω
S
No.6546-2/6
3LN01SS
VGS=1.5V
0.06
0.04
°C
0.10
25
0.05
0.02
0
0
0
0.2
0.4
0.6
0.8
0
1.0
Drain to Source Voltage, VDS -- V
0.5
1.0
1.5
2.0
2.5
VGS=4V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
9
8
7
6
80mA
4
ID=40mA
3
IT00030
RDS(on) -- ID
10
Ta=25°C
5
3.0
Gate to Source Voltage, VGS -- V
IT00029
RDS(on) -- VGS
10
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
--25
°C
75
°C
0.15
Ta
=7
5°
C
--2
5° C
0.08
0.20
°C
0.10
Ta=
0.25
Drain Current, ID -- A
V
V
3.0
4.0V
0.12
VDS=10V
V
2.0
2.5
3.5V
6.0
V
Drain Current, ID -- A
0.14
ID -- VGS
0.30
25
ID -- VDS
0.16
2
7
5
Ta=75°C
25°C
3
--25°C
2
1
1.0
0.01
0
0
1
2
3
4
5
7
6
8
9
Gate to Source Voltage, VGS -- V
10
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
25°C
--25°C
2
1.0
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
5V
,
mA
=2.
V GS
V
=4.0
40
I D=
, VGS
A
80m
I D=
4
3
2
1
0
--60
--40
--20
0
20
40
60
80
2
10
Ta=75°C
7
5
--25°C
3
25°C
2
2
3
5
100
Ambient Temperature, Ta -- °C
120
140
160
IT00035
7
0.01
2
3
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
5
IT00032
3
5
IT00034
| yfs | -- ID
1.0
6
5
3
VGS=1.5V
IT00033
RDS(on) -- Ta
7
2
0.1
5
1.0
0.001
5
3
7
7
7
3
5
RDS(on) -- ID
100
VGS=2.5V
5
3
Drain Current, ID -- A
RDS(on) -- ID
10
2
IT00031
VDS=10V
7
5
3
-Ta=
2
25°C
75°C
25°C
0.1
7
5
3
2
0.01
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
5
IT00036
No.6546-3/6
3LN01SS
IS -- VSD
1.0
7
7
--2
5°C
25
0.1
°C
5°
C
2
5
3
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
3
td(off)
tf
2
100
7
tr
5
3
td(on)
2
Gate to Source Voltage, VGS -- V
5
3
2
10
Ciss
Coss
3
Crss
2
5
7
2
0.1
IT00038
VGS -- Qg
10
VDS=10V
ID=150mA
9
5
3
Drain Current, ID -- A
f=1MHz
7
2
IT00037
7
Ciss, Coss, Crss -- pF
5
10
0.01
1.2
Ciss, Coss, Crss -- VDS
100
VDD=15V
VGS=4V
7
Switching Time, SW Time -- ns
3
Ta
=7
Source Current, IS -- A
5
SW Time -- ID
1000
VGS=0V
8
7
6
5
4
3
2
1
1.0
0
0
2
4
6
8
10
12
14
16
Drain to Source Voltage, VDS -- V
20
IT00039
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00040
PD -- Ta
0.2
Allowable Power Dissipation, PD -- W
18
0.15
0.1
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT01964
No.6546-4/6
3LN01SS
Outline Drawing
3LN01SS-TL-E, 3LN01SS-TL-H
Land Pattern Example
Mass (g) Unit
0.0018 mm
* For reference
Unit: mm
1.2
0.5
0.5
0.45
0.45
0.45 0.45
No.6546-5/6
3LN01SS
Note on usage : Since the 3LN01SS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6546-6/6
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