ENA1646 D

Ordering number : ENA1646A
ATP101
P-Channel Power MOSFET
http://onsemi.com
–30V, –25A, 30mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--30
V
±20
V
--25
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
25
mJ
--13
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--75
A
30
W
°C
Note : *1 VDD=--10V, L=200μH, IAV=--13A
*2 L≤200μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP101-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP101
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
0.8
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/12710PA TKIM TC-00002233 No. A1646-1/7
ATP101
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Conditions
Ratings
min
--30
IGSS
VGS(off)
| yfs |
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--13A
--1.2
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--13A, VGS=--10V
ID=--7A, VGS=--4.5V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
typ
Unit
max
V
--1
μA
±10
μA
--2.6
17
V
S
23
30
mΩ
36
51
mΩ
875
pF
220
pF
Crss
155
pF
9.2
ns
Rise Time
td(on)
tr
70
ns
Turn-OFF Delay Time
td(off)
80
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--25A
IS=--25A, VGS=0V
70
ns
18.5
nC
3.2
nC
4.0
nC
--0.99
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --15V
VIN
ID= --13A
RL=1.15Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP101
P.G
50Ω
S
Ordering Information
Device
ATP101-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1646-2/7
ATP101
ID -- VDS
V
--4.0V
Tc=
--25
°C
7
5
°C
25°
C
VDS= --10V
Single pulse
.5
--25
--10
--5
--15
--10
5°C
VGS= --3.5V
--20
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
50
ID= --7A
--13A
40
30
20
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
C
5°
=
Tc
5
--2
°C
75
3
2
1.0
7
5
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
Drain Current, ID -- A
Switching Time, SW Time -- ns
2
7
--4.0
--4.5
7A
= -VGS
40
A
= --13
V, I D
30
--10
V GS=
20
10
--40
--20
0
20
40
60
80
100
120
140
160
IT15315
IS -- VSD
VGS=0V
Single pulse
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
--5.0
IT15313
= -, ID
4.5V
50
IT15316
--1.4
IT15317
Ciss, Coss, Crss -- VDS
3
VDD= --15V
VGS= --10V
f=1MHz
2
td(off)
100
7
tf
5
3
tr
2
1000
Ciss
7
5
3
Coss
2
Crss
td(on)
10
100
7
5
--0.1
--3.5
60
--0.01
7
5
3
2
--0.001
--0.2
Ciss, Coss, Crss -- pF
3
5
--3.0
Case Temperature, Tc -- °C
3
7
--2.5
70
7
5
3
2
°C
25
--2.0
Single pulse
0
--60
VDS= --10V
10
--1.5
RDS(on) -- Tc
IT15314
| yfs | -- ID
2
--1.0
Gate-to-Source Voltage, VGS -- V
10
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
5
--0.5
80
Tc=25°C
Single pulse
70
0
IT15312
RDS(on) -- VGS
80
0
--2.0
C
--1.5
--25°
--1.0
25°C
--0.5
Tc=
75°C
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
--2
5
25
°C
--5
°C
--4
--16.
0
--15
ID -- VGS
--30
Tc=
7
V --1
0.0V --8
.0V
--20
Drain Current, ID -- A
--6
.0V
Tc=25°C
Drain Current, ID -- A
--25
2
3
5 7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
2
3
5
7
IT15318
7
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT15319
No. A1646-3/7
ATP101
VGS -- Qg
--10
--7
--6
--5
--4
--1
3
2
2
4
6
8
10
12
14
16
PD -- Tc
20
20
15
10
5
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15322
op
er
Operation in
this area is
limited by R DS (on).
ati
on
Tc=25°C
Single pulse
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT15321
EAS -- Ta
120
25
0
DC
IT15320
30
0
ms
--0.1
--0.1
Avalanche Energy derating factor -- %
35
18
10
3
2
--2
0
ID = --25A
--10
7
5
--1.0
7
5
--3
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
5
3
2
PW≤10μs 1
0μ
s
10
0μ
s
1m
s
s
Drain Current, ID -- A
--8
0
IDP = --75A
--100
7
0m
10
Gate-to-Source Voltage, VGS -- V
--9
ASO
2
VDS= --15V
ID= --25A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1646-4/7
ATP101
Taping Specification
ATP101-TL-H
No. A1646-5/7
ATP101
Outline Drawing
ATP101-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1646-6/7
ATP101
Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1646-7/7
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