ENA1597 D

Ordering number : ENA1597A
ATP106
P-Channel Power MOSFET
http://onsemi.com
–40V, –30A, 25mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--40
V
±20
V
--30
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
30
mJ
--15
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--90
A
40
W
°C
Note : *1 VDD=--10V, L=200μH, IAV=--15A
*2 L≤200μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP106-TL-H
1.5
6.5
Packing Type: TL
Marking
ATP106
0.4
0.4
0.5
4
4.6
2.6
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/N0409PA TKIM TC-00002145 No. A1597-1/7
ATP106
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
Ratings
min
typ
Unit
max
--40
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--15A
28
RDS(on)1
ID=--15A, VGS=--10V
19
25
mΩ
RDS(on)2
ID=--8A, VGS=--4.5V
29
41
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
--1.5
--1
μA
±10
μA
--2.6
V
S
1380
pF
210
pF
Crss
150
pF
td(on)
tr
12
ns
120
ns
110
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--30A
IS=--30A, VGS=0V
90
ns
29
nC
6.4
nC
5.9
nC
--0.97
--1.5
V
Switching Time Test Circuit
VDD= --20V
VIN
0V
--10V
ID= --15A
RL=1.33Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP106
P.G
50Ω
S
Ordering Information
Device
ATP106-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1597-2/7
ATP106
VGS= --3.0V
--1.0
--1.2
--1.4
--1.6
--1.8
50
ID= --8A
--15A
40
35
30
25
20
15
10
Gate-to-Source Voltage, VGS -- V
C
5°
10
=
Tc
7
--2
°C
75
5
3
2
1.0
7
--0.1
2
3
5
7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
5
7
25°
C
--2.5
--3.0
--3.5
C
Single pulse
50
45
40
8A
35
= -, ID
.5V
4
= -V GS
30
5A
= --1
0V, I D
1
=
VGS
25
20
15
10
0
--25
25
50
75
100
125
150
IT15125
IS -- VSD
VGS=0V
Single pulse
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
IT15126
SW Time -- ID
--5.0
IT15123
55
--100
7
5
3
2
--10
7
5
3
2
Ciss, Coss, Crss -- VDS
5
VDD= --20V
VGS= --10V
75°
25°
C
--4.0 --4.5
Case Temperature, Tc -- °C
Source Current, IS -- A
°C
25
2
--2.0
RDS(on) -- Tc
5
--50
VDS= --10V
Single pulse
3
--1.5
IT15124
| yfs | -- ID
5
--1.0
Gate-to-Source Voltage, VGS -- V
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
7
--0.5
60
Tc=25°C
Single pulse
45
0
IT15122
RDS(on) -- VGS
55
0
--2.0
C
--0.8
--25°
--0.6
25°C
--0.4
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--15
5°C
--0.2
5
0
Forward Transfer Admittance, | yfs | -- S
--20
Tc=
7
0
60
--1.4
IT15127
f=1MHz
3
2
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
--25
--5
Drain-to-Source Voltage, VDS -- V
5
--30
--10
--5
7
--35
Tc=
--2
75°
5°C
C
--8.
0
--3.5V
--10
1000
Tc=
--6
--40
--15
0
VDS= --10V
Single pulse
--45
Drain Current, ID -- A
--20
V
--4.0
V
0V --10
.0V
--25
.5V
--4
ID -- VGS
--50
--16
.
Drain Current, ID -- A
--30
.0V
Tc=25°C
Single pulse
--25
°C
ID -- VDS
--35
td(off)
100
tf
7
5
tr
3
2
Ciss
1000
7
5
3
Coss
Crss
2
td(on)
100
10
7
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
2
3
5 7
IT15128
7
0
--5
--10
--15
--20
--25
--30
--35
Drain-to-Source Voltage, VDS -- V
--40
IT15129
No. A1597-3/7
ATP106
VGS -- Qg
--10
--2
--1.0
7
5
--1
3
2
--3
0
5
10
15
20
25
Total Gate Charge, Qg -- nC
PD -- Tc
30
30
25
20
15
10
5
20
40
60
80
100
3
5 7 --1.0
120
Case Temperature, Tc -- °C
140
160
IT15132
2
3
5
7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT15131
EAS -- Ta
120
35
0
2
IT15130
40
0
Tc=25°C
Single pulse
--0.1
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
45
Operation in
this area is
limited by RDS(on).
3
2
on
ati
er
--4
--10
7
5
op
--5
10
0m
s
s
m
--6
ID= --30A
3
2
s
1m
--7
PW≤10μs 10
μs
10
0μ
s
10
Drain Current, ID -- A
--8
0
IDP= --90A
--100
7
5
DC
Gate-to-Source Voltage, VGS -- V
--9
ASO
2
VDS= --20V
ID= --30A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15133
No. A1597-4/7
ATP106
Taping Specification
ATP106-TL-H
No. A1597-5/7
ATP106
Outline Drawing
ATP106-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1597-6/7
ATP106
Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1597-7/7
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