Ordering number : ENA1597A ATP106 P-Channel Power MOSFET http://onsemi.com –40V, –30A, 25mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --40 V ±20 V --30 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 30 mJ --15 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --90 A 40 W °C Note : *1 VDD=--10V, L=200μH, IAV=--15A *2 L≤200μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP106-TL-H 1.5 6.5 Packing Type: TL Marking ATP106 0.4 0.4 0.5 4 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/N0409PA TKIM TC-00002145 No. A1597-1/7 ATP106 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--40V, VGS=0V Ratings min typ Unit max --40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--15A 28 RDS(on)1 ID=--15A, VGS=--10V 19 25 mΩ RDS(on)2 ID=--8A, VGS=--4.5V 29 41 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time --1.5 --1 μA ±10 μA --2.6 V S 1380 pF 210 pF Crss 150 pF td(on) tr 12 ns 120 ns 110 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--20V, VGS=--10V, ID=--30A IS=--30A, VGS=0V 90 ns 29 nC 6.4 nC 5.9 nC --0.97 --1.5 V Switching Time Test Circuit VDD= --20V VIN 0V --10V ID= --15A RL=1.33Ω VIN D PW=10μs D.C.≤1% VOUT G ATP106 P.G 50Ω S Ordering Information Device ATP106-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1597-2/7 ATP106 VGS= --3.0V --1.0 --1.2 --1.4 --1.6 --1.8 50 ID= --8A --15A 40 35 30 25 20 15 10 Gate-to-Source Voltage, VGS -- V C 5° 10 = Tc 7 --2 °C 75 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 25° C --2.5 --3.0 --3.5 C Single pulse 50 45 40 8A 35 = -, ID .5V 4 = -V GS 30 5A = --1 0V, I D 1 = VGS 25 20 15 10 0 --25 25 50 75 100 125 150 IT15125 IS -- VSD VGS=0V Single pulse --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT15126 SW Time -- ID --5.0 IT15123 55 --100 7 5 3 2 --10 7 5 3 2 Ciss, Coss, Crss -- VDS 5 VDD= --20V VGS= --10V 75° 25° C --4.0 --4.5 Case Temperature, Tc -- °C Source Current, IS -- A °C 25 2 --2.0 RDS(on) -- Tc 5 --50 VDS= --10V Single pulse 3 --1.5 IT15124 | yfs | -- ID 5 --1.0 Gate-to-Source Voltage, VGS -- V --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 60 Tc=25°C Single pulse 45 0 IT15122 RDS(on) -- VGS 55 0 --2.0 C --0.8 --25° --0.6 25°C --0.4 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --15 5°C --0.2 5 0 Forward Transfer Admittance, | yfs | -- S --20 Tc= 7 0 60 --1.4 IT15127 f=1MHz 3 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --25 --5 Drain-to-Source Voltage, VDS -- V 5 --30 --10 --5 7 --35 Tc= --2 75° 5°C C --8. 0 --3.5V --10 1000 Tc= --6 --40 --15 0 VDS= --10V Single pulse --45 Drain Current, ID -- A --20 V --4.0 V 0V --10 .0V --25 .5V --4 ID -- VGS --50 --16 . Drain Current, ID -- A --30 .0V Tc=25°C Single pulse --25 °C ID -- VDS --35 td(off) 100 tf 7 5 tr 3 2 Ciss 1000 7 5 3 Coss Crss 2 td(on) 100 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 IT15128 7 0 --5 --10 --15 --20 --25 --30 --35 Drain-to-Source Voltage, VDS -- V --40 IT15129 No. A1597-3/7 ATP106 VGS -- Qg --10 --2 --1.0 7 5 --1 3 2 --3 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Tc 30 30 25 20 15 10 5 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15132 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15131 EAS -- Ta 120 35 0 2 IT15130 40 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 Operation in this area is limited by RDS(on). 3 2 on ati er --4 --10 7 5 op --5 10 0m s s m --6 ID= --30A 3 2 s 1m --7 PW≤10μs 10 μs 10 0μ s 10 Drain Current, ID -- A --8 0 IDP= --90A --100 7 5 DC Gate-to-Source Voltage, VGS -- V --9 ASO 2 VDS= --20V ID= --30A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15133 No. A1597-4/7 ATP106 Taping Specification ATP106-TL-H No. A1597-5/7 ATP106 Outline Drawing ATP106-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1597-6/7 ATP106 Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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