ENA1754 D

Ordering number : ENA1754A
ATP112
P-Channel Power MOSFET
http://onsemi.com
–60V, –25A, 43mΩ, Single ATPAK
Features
•
•
•
ON-resistance RDS(on)1=33mΩ(typ.)
4V drive
Protection diode in
Input Capacitance Ciss=1450pF(typ.)
Halogen free compliance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--60
V
±20
V
--25
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
50
mJ
--13
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--75
A
40
W
°C
Note : *1 VDD=--10V, L=500μH, IAV=--13A
*2 L≤500μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP112-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP112
6.05
4.6
Electrical Connection
0.7
0.6
0.55
0.4
2.3
0.1
2.3
1.7
0.5
3
0.8
TL
2,4
2
1
9.5
7.3
LOT No.
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62012 TKIM/72110PA TKIM TC-00002329 No. A1754-1/7
ATP112
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
Ratings
min
typ
Unit
max
--60
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--13A
24
RDS(on)1
ID=--13A, VGS=--10V
33
43
mΩ
RDS(on)2
ID=--7A, VGS=--4.5V
42
59
mΩ
RDS(on)3
ID=--3.5A, VGS=--4V
45
63
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.2
--1
μA
±10
μA
--2.6
1450
pF
155
pF
Crss
125
pF
Turn-ON Delay Time
td(on)
10
ns
Rise Time
tr
80
ns
Turn-OFF Delay Time
td(off)
150
ns
Fall Time
tf
120
ns
Total Gate Charge
Qg
33.5
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
V
S
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--25A
IS=--25A, VGS=0V
5.3
nC
7.9
nC
--0.97
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --30V
VIN
ID=13A
RL=2.3Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP112
P.G
50Ω
S
Ordering Information
Device
ATP112-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1754-2/7
ATP112
V
--3.0
V
5
4.
--
VGS= --2.5V
Tc
=
75
°C
--30
--20
--10
25
--5
--40
°C
Tc=
75°
--2
C
5°C
Drain Current, ID -- A
--10
--50
--4
0V --10
.0V
--8
.0V
--6
.0V
--15
.
--3
--16
.
Drain Current, ID -- A
--20
VDS= --10V
Single pulse
5V
V
.0
--2
5°C
Tc=25°C
Single pulse
ID -- VGS
--60
25°
C
ID -- VDS
--25
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
70
--7A
60
--3.5A
50
40
30
Gate-to-Source Voltage, VGS -- V
VDS= --10V
Single pulse
°C
25
2
C
5°
10
=
Tc
7
--2
°
75
C
5
3
2
1.0
7
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain Current, ID -- A
3
5
55
50
45
40
35
30
25
20
--25
0
25
125
150
IT15593
VGS=0V
Single pulse
--1.0
7
5
3
2
--0.1
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT15595
Ciss, Coss, Crss -- VDS
f=1MHz
2
tf
100
7
5
tr
3
2
Ciss
1000
7
5
3
2
Coss
100
td(on)
10
Crss
7
5
100
IS -- VSD
--100
7
5
3
2
--10
7
5
3
2
5
td(off)
3
75
3
2
2
50
Diode Forward Voltage, VSD -- V
VDD= --30V
VGS= --10V
7
--0.1
A
3.5
= -, ID
.0V
--7A
--4
=
I D=
,
S
5V
VG
13A
--4.
= -=
I
D
,
.0V
V GS
--10
=
V GS
60
--0.01
7
5
3
2
--0.001
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
3
65
IT15594
SW Time -- ID
5
70
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
75
IT15592
| yfs | -- ID
5
Single pulse
80
15
10
--50
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
IT15591
RDS(on) -- Tc
85
ID= --13A
20
0
Gate-to-Source Voltage, VGS -- V
90
Tc=25°C
Single pulse
80
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --5.5 --6.0
0
IT15590
RDS(on) -- VGS
90
0
--2.0
25°C
--25°
C
--0.4
5°C
--0.2
Tc=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
2
3
5
7
IT15596
5
0
--10
--20
--30
--40
--50
Drain-to-Source Voltage, VDS -- V
--60
IT15597
No. A1754-3/7
ATP112
VGS -- Qg
--10
--7
3
2
Drain Current, ID -- A
3
2
0
5
10
15
20
25
30
Total Gate Charge, Qg -- nC
PD -- Tc
40
30
25
20
15
10
5
20
40
60
80
100
3
5 7 --1.0
120
Case Temperature, Tc -- °C
140
160
IT15600
2
3
5
7 --10
2
3
5 7 --100
IT15599
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
35
0
2
IT15598
40
0
Tc=25°C
Single pulse
--0.1
--0.1
Avalanche Energy derating factor -- %
45
35
Operation in
this area is
limited by RDS(on).
on
ati
--1
s
er
Gate-to-Source Voltage, VGS -- V
3
2
--2
0
Allowable Power Dissipation, PD -- W
--10
7
5
--1.0
7
5
--3
ms
0m
s
10
op
--4
10
ID= --25A
10
μs
DC
--5
10
0μ
s
--6
IDP= --75A (PW≤10μs)
1m
--8
--100
7
5
--9
ASO
2
VDS= --30V
ID= --25A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15179
No. A1754-4/7
ATP112
Taping Specification
ATP112-TL-H
No. A1754-5/7
ATP112
Outline Drawing
ATP112-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1754-6/7
ATP112
Note on usage : Since the ATP112 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1754-7/7
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