ATP114 D

Ordering number : ENA1711A
ATP114
P-Channel Power MOSFET
http://onsemi.com
–60V, –55A, 16mΩ, Single ATPAK
Features
•
•
•
ON-resistance RDS(on)1=12mΩ(typ.)
4V drive
Protection diode in
Input Capacitance Ciss=4000pF(typ.)
Halogen free compliance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--60
V
±20
V
--55
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
100
mJ
--28
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--165
A
60
W
°C
Note : *1 VDD=--15V, L=200μH, IAV=--28A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP114-TL-H
1.5
6.5
ATP114
6.05
4.6
9.5
7.3
Electrical Connection
0.6
0.55
0.7
1.7
3
0.8
TL
2,4
2
0.5
Marking
LOT No.
1
0.4
2.3
0.1
2.3
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/70710PA TKIM TC-00002342 No. A1711-1/7
ATP114
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
Ratings
min
typ
max
--60
Unit
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--28A
65
RDS(on)1
ID=--28A, VGS=--10V
12
16
mΩ
RDS(on)2
ID=--14A, VGS=--4.5V
15
21
mΩ
RDS(on)3
ID=--7A, VGS=--4V
16.5
24
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
--1.2
--1
μA
±10
μA
--2.6
4000
pF
400
pF
Crss
315
pF
td(on)
tr
19
ns
200
ns
450
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
V
S
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--55Ap
300
ns
92
nC
15
nC
15.5
IS=--55A, VGS=0V
--0.95
nC
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --30V
VIN
ID= --28A
RL=1.07Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP114
P.G
50Ω
S
Ordering Information
Device
ATP114-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1711-2/7
ATP114
--20
VGS= --2.5V
--15
Tc=
--
--60
--50
--40
--30
--20
--10
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --7A
--14A
--28A
20
15
10
5
0
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
5
°C
25
3
2
=
Tc
10
C
5°
--2
°C
75
7
5
3
2
1.0
7
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain Current, ID -- A
7
3
tr
5
td(on)
2
15
10
5
--40
--20
0
20
VDD= --30V
VGS= --10V
2
3
5 7 --1.0
2
3
5 7 --10
60
80
100
120
2
Drain Current, ID -- A
3
5 7--100
2
IT15708
140
160
IT15705
VGS=0V
Single pulse
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT15707
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
Coss
3
Crss
2
10
7
--0.1
40
IS -- VSD
5
100
3
20
7
2
--4.0
IT15703
7A
= -I
D
,
V
4.0
14A
= -= -S
I
G
D
A
V
5V,
--28
--4.
I D=
=
,
V
V GS --10.0
=
VGS
10000
tf
7
25
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
td(off)
5
--3.5
Case Temperature, Tc -- °C
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
5
--3.0
30
IT15706
SW Time -- ID
1000
3
--2.5
Single pulse
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
--2.0
RDS(on) -- Tc
0
--60
--16
VDS= --10V
Single pulse
100
--1.5
Gate-to-Source Voltage, VGS -- V
IT15704
| yfs | -- ID
2
--1.0
--0.5
35
Tc=25°C
Single pulse
30
25
0
IT15702
RDS(on) -- VGS
35
0
--2.0
--25°C
--0.4
5°C
25°C
--0.2
Tc=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
25
°C
--10
--5
Tc=
75°
C
--2
5°C
--25
25°C
75°C
.5V
--3
--4
.
--4
.
Drain Current, ID -- A
--30
--6
.
--35
--3.0V
0V
V --10.
0
--40
VDS= --10V
--70
--16
.0
Drain Current, ID -- A
--45
ID -- VGS
--80
5V
V --8
.0
V
--50
0V
Tc=25°C
25°C
ID -- VDS
--55
100
0
--10
--20
--30
--40
--50
Drain-to-Source Voltage, VDS -- V
--60
IT15709
No. A1711-3/7
ATP114
VGS -- Qg
--10
3
2
--7
--6
--5
10
20
30
40
50
60
70
80
PD -- Tc
100
40
30
20
10
20
40
60
80
100
3
5 7 --1.0
120
Case Temperature, Tc -- °C
140
160
IT15513
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
50
0
2
IT15710
60
0
Tc=25°C
Single pulse
--0.1
--0.1
Avalanche Energy derating factor -- %
70
90
n
3
2
io
--1
0
Operation in
this area is
limited by RDS(on).
3
2
--1.0
7
5
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
--10
7
5
--2
0
1m
s
10
m
10
s
0m
s
3
2
at
--3
ID= --55A
10
μs
10
0μ
s
er
--4
--100
7
5
op
Drain Current, ID -- A
--8
IDP= --165A (PW≤10μs)
C
D
Gate-to-Source Voltage, VGS -- V
--9
ASO
5
VDS= --30V
ID= --55A
5 7--100
IT15512
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15179
No. A1711-4/7
ATP114
Taping Specification
ATP114-TL-H
No. A1711-5/7
ATP114
Outline Drawing
ATP114-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1711-6/7
ATP114
Note on usage : Since the ATP114 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1711-7/7
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