ATP208 D

Ordering number : ENA1396A
ATP208
N-Channel Power MOSFET
http://onsemi.com
40V, 90A, 6mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
4.5V drive
Halogen free compliance
Large current
Slim package
Protection diode in
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
40
PW≤10μs, duty cycle≤1%
V
90
A
270
A
60
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
155
mJ
45
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=15V, L=100μH, IAV=45A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP208-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP208
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/11409PA MS IM TC-00001776 No. A1396-1/7
ATP208
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Conditions
Ratings
min
typ
Unit
max
40
ID=1mA, VGS=0V
VDS=40V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.5
16
VDS=10V, ID=45A
ID=45A, VGS=10V
ID=23A, VGS=4.5V
1
μA
±10
μA
2.6
28
V
S
4.6
6.0
mΩ
7
9.8
mΩ
4510
pF
535
pF
Crss
385
pF
td(on)
tr
35
ns
400
ns
280
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=10V, ID=90A
200
ns
83
nC
19
nC
17
IS=90A, VGS=0V
1.0
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=45A
RL=0.44Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP208
P.G
50Ω
S
Ordering Information
Device
ATP208-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1396-2/7
ATP208
Drain Current, ID -- A
4.0V
50
40
30
VGS=3.5V
100
60
40
20
25
°
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
16
1.8
12
ID=23A
10
45A
8
6
4
2
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
10
7
5
3
2
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5
6
2
--40
--20
0
20
40
60
80
100
120
tf
100
7
tr
5
td(on)
3
140
160
IT14325
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
Ciss, Coss, Crss -- VDS
1.4
IT14327
f=1MHz
Ciss
5
td(off)
2
5.5
IT14323
4
7
3
5.0
A
=23
V, I D
5
.
4
=
VGS
A
=45
V, I D
0
.
0
=1
VGS
8
10000
VDD=20V
VGS=10V
3
2
1000
7
Coss
5
Crss
3
2
2
10
0.1
4.5
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
4.0
10
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
5 7 100
2
IT14326
SW Time -- ID
1000
3.5
Case Temperature, Tc -- °C
1.0
7
3
0.1
3.0
12
0
--60
16
5°C
--2
=
C
Tc
75°
2.5
Single pulse
C
25°
2
2.0
RDS(on) -- Tc
14
VDS=10V
3
1.5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
1.0
IT14324
| yfs | -- ID
7
0.5
Gate-to-Source Voltage, VGS -- V
0
0
0
IT14322
Tc=25°C
Single pulse
14
0
2.0
°C
25°C
--25°
C
0.2
Tc=
75
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
C
20
10
25°
C
80
Tc=
75°
C
--25
°C
10.0
60
VDS=10V
120
16.0V
Drain Current, ID -- A
70
5V
4.
6.0V
V 8.0V
80
ID -- VGS
140
Tc=25°C
Tc=
--25°
C
75°C
ID -- VDS
90
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT14328
100
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
40
IT14329
No. A1396-3/7
ATP208
VGS -- Qg
10
3
2
7
6
5
10
20
30
40
50
60
70
Total Gate Charge, Qg -- nC
PD -- Tc
10
7
5
Operation in this area
is limited by RDS(on).
3
2
1.0
7
5
80
90
40
30
20
10
0
40
60
80
100
5
7 1.0
120
Case Temperature, Tc -- °C
140
160
IT14332
2
3
5
7 10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT14331
EAS -- Ta
120
50
20
3
IT14330
60
0
Tc=25°C
pulse
0.1 Single
2
0.1
Avalanche Energy derating factor -- %
70
Allowable Power Dissipation, PD -- W
3
2
n
0
s
10
m
0m s
s
10
μs
10
3
2
1
0μ
s
io
2
100
7
5
10
1m
at
er
3
ID=90A
op
4
PW≤10μs
C
Drain Current, ID -- A
8
0
IDP=270A
D
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=20V
ID=90A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1396-4/7
ATP208
Taping Specification
ATP208-TL-H
No. A1396-5/7
ATP208
Outline Drawing
ATP208-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1396-6/7
ATP208
Note on usage : Since the ATP208 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1396-7/7
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