ATP212 D

Ordering number : ENA1507A
ATP212
N-Channel Power MOSFET
http://onsemi.com
60V, 35A, 23mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
4V drive
Halogen free compliance
Large current
Slim package
Protection diode in
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
60
PW≤10μs, duty cycle≤1%
V
35
A
105
A
40
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
19
mJ
18
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=10V, L=100μH, IAV=18A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP212-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP212
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
3
1.7
2,4
2
1
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/62409PA TKIM TC-00001998 No. A1507-1/7
ATP212
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
60
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.2
1
μA
±10
μA
2.6
V
35
RDS(on)1
RDS(on)2
VDS=10V, ID=18A
ID=18A, VGS=10V
17
23
mΩ
ID=9A, VGS=4.5V
23
33
mΩ
RDS(on)3
ID=5A, VGS=4V
25
37
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
S
1820
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=35A
pF
150
pF
100
pF
16
ns
110
ns
125
ns
87
ns
34.5
nC
6.5
nC
6.8
IS=35A, VGS=0V
0.96
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=30V
VIN
ID=18A
RL=1.67Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP212
P.G
50Ω
S
Ordering Information
Device
ATP212-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1507-2/7
ATP212
VGS=2.5V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
45
ID=5A
9A
35
18A
30
25
20
15
10
5
1
2
3
4
5
6
7
8
9
°C
C
5°
10
=
Tc
7
--2
75
°C
5
3
2
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
5
4.5
5.0
5.5
IT14742
5A
I D=
0V,
.
4
=
VGS
=9A
, ID
4.5V
=
18A
VGS
I D=
,
V
0
.
=10
VGS
30
25
20
15
10
5
--25
0
25
50
75
100
125
150
IT14744
IS -- VSD
VGS=0V
Single pulse
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT14746
Ciss, Coss, Crss -- VDS
5
VDD=30V
VGS=10V
f=1MHz
3
3
Ciss
Ciss, Coss, Crss -- pF
2
2
td(off)
100
7
tf
5
tr
3
2
1000
7
5
3
2
Coss
td(on)
100
10
7
0.1
4.0
Single pulse
35
IT14745
SW Time -- ID
7
Switching Time, SW Time -- ns
3
3.5
40
0.01
7
5
3
2
0.001
1.0
7
5
0.1
3.0
45
100
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
25
2
2.5
Case Temperature, Tc -- °C
VDS=10V
Single pulse
3
2.0
50
IT14743
| yfs | -- ID
1.5
RDS(on) -- Tc
0
--50
10 11 12 13 14 15 16
Gate-to-Source Voltage, VGS -- V
7
1.0
Gate-to-Source Voltage, VGS -- V
0
0
0.5
55
Tc=25°C
Single pulse
40
0
IT14741
RDS(on) -- VGS
50
0
2.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
10
5°C
25°C
--25°
C
0.2
55
5
20
Tc=
7
0
Drain-to-Source Voltage, VDS -- V
5
30
25
°
5
40
Tc=
75°
C
C
10
0
Tc=
--25
°C
75°
C
V
3.0V
--25
°
15
50
C
20
VDS=10V
Single pulse
3.5V
Drain Current, ID -- A
25
ID -- VGS
60
4.5
16.0 10.0V
V
8.0V
6.0V
Drain Current, ID -- A
30
4.0
V
Tc=25°C
Single pulse
25°
C
ID -- VDS
35
Crss
7
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT14747
5
0
10
20
30
40
50
Drain-to-Source Voltage, VDS -- V
60
IT14748
No. A1507-3/7
ATP212
VGS -- Qg
10
7
6
5
4
5
10
15
20
25
30
PD -- Tc
45
35
25
20
15
10
5
0
60
80
100
Tc=25°C
Single pulse
2
3
5 7 1.0
120
Case Temperature, Tc -- °C
140
160
IT14751
2
3
5 7 10
2
3
5 7 100
IT14750
Drain-to-Source Voltage, VDS -- V
Avalanche Energy derating factor -- %
30
40
Operation in this area
is limited by RDS(on).
EAS -- Ta
120
35
20
s
IT14749
40
0
0m
0.1
0.1
40
ms
μs
on
ati
er
3
2
10
0μ
s
10
3
2
1
10
10
10
7
5
1.0
7
5
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
3
2
2
0
ID=35A
op
3
PW≤10μs
DC
Drain Current, ID -- A
8
0
IDP=105A
100
7
5
s
1m
Gate-to-Source Voltage, VGS -- V
9
ASO
3
2
VDS=30V
ID=35A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1507-4/7
ATP212
Taping Specification
ATP212-TL-H
No. A1507-5/7
ATP212
Outline Drawing
ATP212-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1507-6/7
ATP212
Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1507-7/7
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