ENA1712 D

Ordering number : ENA1712A
ATP214
N-Channel Power MOSFET
http://onsemi.com
60V, 75A, 8.1mΩ, Single ATPAK
Features
•
•
•
ON-resistance RDS(on)1=6.2mΩ(typ.)
4V drive
Protection diode in
Input Capacitance Ciss=4850pF(typ.)
Halogen free compliance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
60
PW≤10μs, duty cycle≤1%
V
75
A
225
A
60
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
94
mJ
38
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP214-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP214
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
3
1.7
2,4
2
1
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7
ATP214
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
60
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.2
1
μA
±10
μA
2.6
V
100
RDS(on)1
RDS(on)2
VDS=10V, ID=38A
ID=38A, VGS=10V
6.2
8.1
mΩ
ID=19A, VGS=4.5V
8.2
11.5
mΩ
RDS(on)3
ID=10A, VGS=4V
9.2
14
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
S
4850
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=75A
IS=75A, VGS=0V
pF
370
pF
280
pF
30
ns
240
ns
360
ns
250
ns
96
nC
18.5
nC
18
nC
0.93
1.2
V
Switching Time Test Circuit
10V
0V
VDD=30V
VIN
ID=38A
RL=0.79Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP214
P.G
50Ω
S
Ordering Information
Device
ATP214-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1712-2/7
ATP214
ID -- VDS
50
45
40
35
90
80
3.0V
30
25
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
20
1.8
30
ID=10A
16
19A
14
38A
12
10
8
6
4
2
3
4
5
6
7
8
9
3
2
=
Tc
10
7
5
5°C
--2
C
75°
3
2
3
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
3
VDD=30V
VGS=10V
7
td(off)
5
2
tf
100
7
tr
5
td(on)
3
4.5
IT15695
14
A
10
I D=
,
V
.0
12
=4
V GS
10
A
=19
, ID
V
5
.
38A
=4
I D=
S
,
V
VG
.0
=10
VGS
8
6
4
2
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
--40
--20
0
20
40
60
80
100
120
140
160
IT15697
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT15699
Ciss, Coss, Crss -- VDS
10000
f=1MHz
7
Ciss
5
Ciss, Coss, Crss -- pF
3
4.0
Case Temperature, Tc -- °C
5 7 100
IT15698
SW Time -- ID
1000
3.5
16
0
--60
2
1.0
7
5
0.1
3.0
18
Source Current, IS -- A
°C
25
2.5
Single pulse
VDS=10V
Single pulse
100
7
5
2.0
1.5
RDS(on) -- Tc
IT15696
| yfs | -- ID
3
1.0
20
10 11 12 13 14 15 16
Gate-to-Source Voltage, VGS -- V
0.5
Gate-to-Source Voltage, VGS -- V
2
1
0
IT15694
Tc=25°C
Single pulse
18
0
2.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.2
0
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
40
10
5
Switching Time, SW Time -- ns
50
25°
C
VGS=2.5V
10
2
60
20
15
0
70
Tc=
75°
C
--25
°C
55
VDS=10V
Tc=
75°
C
25°C
--25
°C
Drain Current, ID -- A
60
V
3.5
4.5
V
16.0V 10.0V 8.
0V
65
ID -- VGS
100
Tc=25°C
Drain Current, ID -- A
70
4.0
V
6 .0 V
75
3
2
1000
7
5
Coss
3
Crss
2
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
3
5 7 100
2
IT15700
100
7
0
10
20
30
40
50
Drain-to-Source Voltage, VDS -- V
60
IT15701
No. A1712-3/7
ATP214
VGS -- Qg
10
7
6
5
3
2
10
20
30
40
50
60
70
80
PD -- Tc
100
40
30
20
10
20
40
60
80
100
3
5 7 1.0
120
Case Temperature, Tc -- °C
140
160
IT15513
2
3
5 7 10
2
3
5 7 100
IT15514
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
50
0
2
IT15711
60
0
Tc=25°C
Single pulse
0.1
0.1
Avalanche Energy derating factor -- %
70
90
n
1
io
1.0
7
5
0
Operation in
this area is
limited by RDS(on).
3
2
2
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
10
7
5
at
3
1m
s
10
m
10
s
0m
s
3
2
10
μs
10
0μ
s
er
4
ID=75A
100
7
5
op
Drain Current, ID -- A
8
0
IDP=225A (PW≤10μs)
3
2
C
D
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=30V
ID=75A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15179
No. A1712-4/7
ATP214
Taping Specification
ATP214-TL-H
No. A1712-5/7
ATP214
Outline Drawing
ATP214-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1712-6/7
ATP214
Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1712-7/7
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