ATP404 D

Ordering number : ENA1405A
ATP404
N-Channel Power MOSFET
http://onsemi.com
60V, 95A, 7.2mΩ, ATPAK
Features
•
•
ON-resistance RDS(on)1=5.5mΩ (typ.)
4.5V drive
•
•
Input capacitance Ciss=6400pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
60
PW≤10μs, duty cycle≤1%
V
95
A
380
A
70
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
214
mJ
48
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=30V, L=100μH, IAV=48A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP404-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP404
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.6
0.4
2.3
0.1
2.3
0.55
0.7
0.5
1
0.8
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/12109QA MSIM TC-00001833 No. A1405-1/7
ATP404
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Unit
max
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=48A
100
RDS(on)1
ID=48A, VGS=10V
5.5
7.2
mΩ
RDS(on)2
ID=48A, VGS=4.5V
7.5
10.5
mΩ
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
60
V
1.2
10
μA
±10
μA
2.6
V
S
6400
pF
490
pF
Crss
380
pF
td(on)
tr
53
ns
640
ns
380
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=95A
Switching Time Test Circuit
10V
0V
typ
ID=1mA, VGS=0V
VDS=60V, VGS=0V
Ciss
Turn-OFF Delay Time
min
V(BR)DSS
IDSS
Input Capacitance
Rise Time
Ratings
Conditions
520
ns
120
nC
25
nC
25
IS=95A, VGS=0V
nC
0.95
1.2
V
Avalanche Resistance Test Circuit
VDD=30V
VIN
L
ID=48A
RL=0.625Ω
VIN
D
PW=10μs
D.C.≤1%
≥50Ω
VOUT
ATP404
10V
0V
G
VDD
50Ω
ATP404
P.G
50Ω
S
Ordering Information
Device
ATP404-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1405-2/7
ATP404
180
4.5V
120
100
80
60
1.0
1.5
10
8
Tc=75°C
6
25°C
--25°C
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
100
7
5
3
C
5°
2
=
Tc
10
7
5
--2
75
°C
3
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5.0
5.5
IT14378
10
A
=48
, ID
V
5
.
=4
A
VGS
=48
, ID
V
0
.
=10
VGS
8
6
4
2
--25
0
25
50
75
100
125
150
IT14380
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14382
Ciss, Coss, Crss -- VDS
f=1MHz
10000
Ciss, Coss, Crss -- pF
7
td(off)
5
3
2
tf
100
tr
7
td(on)
5
Ciss
7
5
3
2
1000
7
Coss
5
Crss
3
3
3
4.5
12
2
1000
2
4.0
Diode Forward Voltage, VSD -- V
SW Time -- ID
2
0.1
3.5
14
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
5 7 100
2
IT14381
VDD=30V
VGS=10V
3.0
Case Temperature, Tc -- °C
2
1.0
7
5
0.1
2.5
Single pulse
Source Current, IS -- A
°C
25
2.0
RDS(on) -- Tc
0
--50
10
VDS=10V
2
1.5
16
IT14379
| yfs | -- ID
3
1.0
Cutoff Voltage, VGS(off) -- V
0
2
0.5
°C
25°C
--25°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=48A
Single pulse
4
0
IT14377
RDS(on) -- VGS
12
0
2.0
Tc=
75
0.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
14
Forward Transfer Admittance, | yfs | -- S
80
60
25
°C
VGS=3.0V
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
100
20
20
2
120
40
40
3
140
Tc=
75°
C
--25
°C
Drain Current, ID -- A
160
140
0
VDS=10V
C 75°C
8.0
160
Drain Current, ID -- A
V
6.0
10
.0V
180
ID -- VGS(off)
200
25 °
V
Tc=25°C
Tc=
--25°
C
ID -- VDS
200
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT14383
2
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14384
No. A1405-3/7
ATP404
VGS -- Qg
10
9
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
1000
7
5
3
2
VDS=30V
ID=95A
7
6
5
4
3
1
50
0
100
150
Total Gate Charge, Qg -- nC
PD -- Tc
60
50
40
30
20
10
0
20
40
60
80
100
100
7
5
3
2
10m
s
10
7
5
3
2
120
Case Temperature, Tc -- °C
140
160
IT14387
1m
DC
1.0
7
5
3
2
0m
s
op
er
2
3
10μ
s
100
μs
s
10
Operation in this area
is limited by RDS(on).
ati
on
2
5 7 10
3
5 7 100
IT14386
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
70
0
ID=95A
IT14385
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
PW≤10μs
0.1
7
5
3 Tc=25°C
2
Single pulse
0.01
2 3
5 7 1.0
0.1
2
0
ASO
IDP=380A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1405-4/7
ATP404
Taping Specification
ATP404-TL-H
No. A1405-5/7
ATP404
Outline Drawing
ATP404-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1405-6/7
ATP404
Note on usage : Since the ATP404 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1405-7/7
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