ATP405 D

Ordering number : ENA1458A
ATP405
N-Channel Power MOSFET
http://onsemi.com
100V, 40A, 33mΩ, ATPAK
Features
•
•
ON-resistance RDS(on)=25mΩ (typ.)
10V drive
•
•
Input capacitance Ciss=4000pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
100
V
±20
V
Allowable Power Dissipation
ID
IDP
PD
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
148
mJ
40
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
40
A
160
A
Note : *1 VDD=30V, L=100μH, IAV=40A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP405-TL-H
1.5
6.5
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
Marking
ATP405
TL
6.05
4.6
9.5
7.3
LOT No.
Electrical Connection
3
0.6
0.4
2.3
0.1
2.3
0.55
0.7
0.5
1
0.8
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62712 TKIM/42209QA MSIM TC-00001943 No. A1458-1/7
ATP405
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)
ID=20A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Rise Time
Turn-OFF Delay Time
min
typ
Unit
max
100
V
2.0
VDS=10V, ID=20A
10
μA
±10
μA
3.5
62
V
S
25
33
mΩ
4000
pF
300
pF
Crss
170
pF
td(on)
tr
38
ns
125
ns
220
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=60V, VGS=10V, ID=40A
Switching Time Test Circuit
10V
0V
Ratings
Conditions
150
ns
68
nC
14
nC
15
IS=40A, VGS=0V
nC
0.9
1.2
V
Avalanche Resistance Test Circuit
VDD=60V
VIN
L
ID=20A
RL=3Ω
VIN
D
PW=10μs
D.C.≤1%
≥50Ω
VOUT
ATP405
10V
0V
G
VDD
50Ω
ATP405
P.G
50Ω
S
Ordering Information
Device
ATP405-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1458-2/7
ATP405
ID -- VDS
V
20
1.5
2.0
2.5
Tc=75°C
30
25°C
20
--25°C
10
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
2
C
5°
-2
=-
10
Tc
7
5
°C
75
3
2
1.0
7
5
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
tf
7
tr
5
20
10
0
--25
25
50
75
100
125
td(on)
3
150
IT14607
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
IT14609
Ciss, Coss, Crss -- VDS
f=1MHz
5
2
100
=
V GS
30
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
3
5.0
IT14605
7
td(off)
4.5
=2
, ID
10V
10000
VDD=60V
VGS=10V
7
4.0
0A
40
IT14608
SW Time -- ID
1000
3.5
50
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
5 7 100
Drain Current, ID -- A
3.0
60
Source Current, IS -- A
°C
25
2.5
Case Temperature, Tc -- °C
VDS=10V
3
2.0
Single pulse
0
--50
10
100
7
5
1.5
RDS(on) -- Tc
IT14606
| yfs | -- ID
2
1.0
Cutoff Voltage, VGS(off) -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
40
0.5
70
ID=20A
Single pulse
60
0
IT14604
RDS(on) -- VGS
70
0
3.0
25°C
1.0
5°C
0.5
Tc=
7
0
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
20
10
10
Switching Time, SW Time -- ns
30
5°C
VGS=4.0V
40
C
30
50
--25
°
40
60
Tc=
7
.0
V
Drain Current, ID -- A
4.5V
25
°C
6.0
10
Drain Current, ID -- A
8
60
0
5°C
75 ° C
25°C
70
.0V
50
Tc= -2
VDS=10V
70
0
ID -- VGS(off)
80
Tc=25°C
--25°
C
80
Ciss
3
2
1000
7
5
Coss
3
2
Crss
2
10
0.1
2
3
5
7 1.0
2
3
5
7 10
Drain Current, ID -- A
2
3
5
7
IT14610
100
7
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14611
No. A1458-3/7
ATP405
VGS -- Qg
10
VDS=60V
ID=40A
7
6
5
3
1
0
0
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
PD -- Tc
80
60
50
40
30
20
10
0
20
40
60
80
100
0m
10
7
5
3
2
s
1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
2 3
120
Case Temperature, Tc -- °C
140
160
IT14602
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
70
0
ms
10
IT14612
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
70
ID=40A
0.1
7
5
3 Tc=25°C
2
Single pulse
0.01
0.01 2 3 5 7 0.1
2
10
μs
0μ
s
10
10
n
tio
era
op
4
PW≤10μs
s
1m
Drain Current, ID -- A
8
IDP=160A
100
7
5
3
2
DC
Gate-to-Source Voltage, VGS -- V
9
ASO
5
3
2
5 7100 2
IT14613
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14603
No. A1458-4/7
ATP405
Taping Specification
ATP405-TL-H
No. A1458-5/7
ATP405
Outline Drawing
ATP405-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1458-6/7
ATP405
Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1458-7/7
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