BFL4026 D

Ordering number : ENA1797A
BFL4026
N-Channel Power MOSFET
http://onsemi.com
900V, 5A, 3.6Ω, TO-220F-3FS
Features
•
•
ON-resistance RDS(on)=2.8Ω (typ.)
10V drive
•
Input capacitance Ciss=650pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Unit
900
V
±30
V
5
A
IDc*1
Limited only by maximum temperature Tch=150°C
IDpack*2
Tc=25°C (Our ideal heat dissipation condition)*3
3.5
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
10
A
Allowable Power Dissipation
PD
2.0
W
Channel Temperature
Drain Current (DC)
35
W
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
132
mJ
Avalanche Current *5
Tc=25°C (Our ideal heat dissipation condition)*3
5
A
Note : *1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=5A (Fig.1)
*5 L≤10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
BFL4026-1E
Marking
Electrical Connection
2
FL4026
3.23
15.8
15.87
6.68
3.3
2.54
LOT No.
1
12.98
2.76
1.47 MAX
3
0.8
1
2.54
2
3
0.5
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
71112 TKIM/70710QB TKIM TC-00002399 No. A1797-1/7
BFL4026
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=10mA, VGS=0V
VDS=720V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1mA
VDS=20V, ID=2.5A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=2.5A, VGS=10V
Input Capacitance
Ciss
min
typ
Unit
max
900
V
1.0
mA
±100
nA
2.0
4.0
1.4
2.8
V
S
2.8
3.6
Ω
650
pF
Output Capacitance
Coss
100
pF
Reverse Transfer Capacitance
Crss
35
pF
Turn-ON Delay Time
td(on)
14
ns
Rise Time
tr
37
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=5A, VGS=0V
0.85
Reverse Recovery Time
trr
See Fig.3
720
ns
Reverse Recovery Charge
Qrr
IS=5A, VGS=0V, di/dt=100A/μs
4700
nC
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=5A
≥50Ω
RG
10V
0V
ns
33
nC
5.3
nC
nC
1.2
V
Fig.2 Switching Time Test Circuit
10V
0V
L
VIN
VDD=200V
ID=2.5A
RL=80Ω
VIN
G
S
ns
39
16.5
Fig.1 Avalanche Resistance Test Circuit
D
117
D
BFL4026
VDD
50Ω
VOUT
PW=10μs
D.C.≤0.5%
G
BFL4026
P.G
RGS=50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BFL4026
D
500μH
G
S
VDD=50V
Driver MOSFET
Ordering Information
Device
BFL4026-1E
Package
Shipping
memo
TO-220F-3FS
50pcs./magazine
Pb Free
No. A1797-2/7
BFL4026
ID -- VDS
VDS=20V
9
7V
6
6V
4
3
2
5V
VGS=4V
5
10
15
20
25
30
35
40
45
Drain-to-Source Voltage, VDS -- V
4
3
25°C
2
--25°C
1
3
4
5
6
7
8
9
10
11
12
13
7
5
7
5
3
2
0.1
7
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
7
=1
S
4
VG
3
2
1
--25
0
25
50
75
100
125
150
IT15764
IS -- VSD
VGS=0V
Single pulse
3
2
1.0
7
5
3
2
0.1
7
5
100
7
5
tf
3
tr
2
td(on)
0.8
1.0
1.2
IT15766
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td (off)
0.6
Ciss, Coss, Crss -- VDS
5
3
2
0.4
Diode Forward Voltage, VSD -- V
VDD=200V
VGS=10V
5
Switching Time, SW Time -- ns
.5A
=2
ID
,
0V
5
0.01
0.2
5 7 10
IT15765
Drain Current, ID -- A
1000
7
5
Ciss
3
2
Co
ss
100
7
5
Cr
ss
3
2
10
7
0.1
6
3
2
5
3
0.01
7
10
7
5
5°C
--2
=
Tc
°C
75
1.0
12
IT15762
8
2
°C
25
2
10
Case Temperature, Tc -- °C
VDS=20V
3
8
Single pulse
IT15763
| yfs | -- ID
6
RDS(on) -- Tc
0
--50
15
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
Gate-to-Source Voltage, VGS -- V
14
4
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Tc=75°C
2
2
9
6
5
0
10
7
0
0
50
ID=2.5A
Single pulse
8
2
IT15761
RDS(on) -- VGS
9
3
5°C
0
75°C
4
1
1
0
25°C
5
--25°
C
5
6
25°C
7
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
7
15V
10V
8
ID -- VGS
8
Tc=25°C
Tc=
7
10
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT15767
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT15768
No. A1797-3/7
BFL4026
VGS -- Qg
10
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
5
4
1
3
2
5
10
15
20
25
30
35
Total Gate Charge, Qg -- nC
0.5
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT15771
EAS -- Ta
120
5 7 1.0
2 3
5 7 10
2 3
5 7100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
1.0
20
2 3
PD -- Tc
40
1.5
0
*1. Shows chip capability
*2. Our ideal heat dissipation condition
Tc=25°C
Single pulse
0.01
0.1
40
2.0
0
Operation in
this area is
limited by RDS(on).
IT15769
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
3
2
2
0
1m
s
IDpack(*2)=3.5A
1.0
7
5
0.1
7
5
3
0
Avalanche Energy derating factor -- %
3
2
s
0μ
6
IDc(*1)=5A
s
m
n
10 ms atio
0 r
10 ope
DC
7
IDP=10A (PW≤10μs)
10
8
10
7
5
μs
10
9
ASO
2
VDS=200V
ID=5A
5 71000 2
IT15770
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15772
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1797-4/7
BFL4026
Magazine Specification
BFL4026-1E
No. A1797-5/7
BFL4026
Outline Drawing
BFL4026-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1797-6/7
BFL4026
Note on usage : Since the BFL4026 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1797-7/7
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