BSS84LT1 D

BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
• SOT−23 Surface Mount Package Saves Board Space
• AEC Q101 Qualified and PPAP Capable − BVSS84L
• These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
−50 V
10 W @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
130
520
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
RqJA
556
°C/W
TL
260
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
P−Channel
3
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
3
SOT−23
CASE 318
STYLE 21
1
2
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD MG
G
1
Gate
PD
M
G
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BSS84LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BVSS84LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 8
1
Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
−50
−
−
Vdc
−
−
−
−
−
−
−0.1
−15
−60
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Zero Gate Voltage Drain Current
(VDS = −25 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±10
nAdc
Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA)
VGS(th)
−0.9
−
−2.0
Vdc
Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc)
RDS(on)
−
4.7
10
W
|yfs|
50
−
−
mS
pF
mAdc
ON CHARACTERISTICS (Note 1)
Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 5.0 Vdc
Ciss
−
36
−
Output Capacitance
VDS = 5.0 Vdc
Coss
−
17
−
Transfer Capacitance
VDG = 5.0 Vdc
Crss
−
6.5
−
td(on)
−
3.6
−
tr
−
9.7
−
td(off)
−
12
−
tf
−
1.7
−
QT
−
2.2
−
nC
IS
−
−
−0.130
A
ISM
−
−
−0.520
VSD
−
−
−2.2
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
Fall Time
Gate Charge
VDD = −40 Vdc, ID = −0.5 A,
VGS = −10 V
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
VGS = 0 V, IS = −130 mA
V
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
0.5
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
25°C
VDS = 10 V
0.5
- 55°C
150°C
0.4
0.3
0.2
0.1
0
1
1.5
2
2.5
3
3.5
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
-3.25 V
0.4
0.35
0.3
-3.0 V
0.25
0.2
-2.75 V
0.15
-2.5 V
0.1
-2.25 V
0.05
0
4
VGS = -3.5 V
TJ = 25°C
0.45
0
1
2
3
4
5
6
7
8
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
9
10
BSS84L, BVSS84L
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
TYPICAL ELECTRICAL CHARACTERISTICS
9
VGS = -4.5 V
8
150°C
7
6
25°C
5
4
-55°C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
7
150°C
VGS = -10 V
6.5
6
5.5
5
4.5
4
25°C
3.5
3
-55°C
2.5
2
0
0.2
0.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VGS = -10 V
ID = -0.52 A
1.4
VGS = -4.5 V
ID = -0.13 A
1.2
1
0.8
-5
45
95
-8
-6
-5
-4
ID = -0.5 A
-3
-2
-1
0
145
VDS = -40 V
TJ = 25°C
-7
0
1000
500
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
1
TJ = 150°C
0.1
25°C
-55°C
0.01
0.001
0
0.5
1500
QT, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
2
0.6
-55
0.6
0.5
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
1.6
0.4
-ID, DRAIN CURRENT (AMPS)
-ID, DRAIN CURRENT (AMPS)
1.8
0.3
1.0
1.5
2.0
2.5
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
3.0
2000
BSS84L, BVSS84L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
SEE VIEW C
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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BSS84LT1/D
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