EN9050 D

Ordering number : EN9050A
BXL4004
N-Channel Power MOSFET
http://onsemi.com
40V, 100A, 3.9mΩ, TO-220-3L
Features
•
•
ON-resistance RDS(on)1=3mΩ (typ.)
4.5V drive
•
Input capacitance Ciss=8200pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Unit
40
PW≤10μs, duty cycle≤1%
V
±20
V
100
A
400
A
1.75
W
Allowable Power Dissipation
PD
75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
420
mJ
60
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=24V, L=100μH, IAV=60A (Fig.1)
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7536-001
• Package
: TO-220-3L
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
BXL4004-1E
4.5
3.6
2.8
(1.7)
1.3
10.0
Marking
Electrical Connection
1.3
2
9.2
8.9 MAX
13.3
15.7
(0.6)
XL4004
LOT No.
1
1.27
0.8
13.08
3.0
1.52
3
0.5
2.4
1 2 3
2.54
1 : Gate
2 : Drain
3 : Source
2.54
TO-220-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7
BXL4004
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
40
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=10V, ID=50A
RDS(on)1
ID=50A, VGS=10V
3
3.9
mΩ
RDS(on)2
ID=50A, VGS=4.5V
4.7
6.6
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
ID=1mA, VGS=0V
VDS=40V, VGS=0V
Unit
1.2
10
μA
±10
μA
2.6
120
V
S
8200
pF
940
pF
Crss
700
pF
Turn-ON Delay Time
td(on)
65
ns
Rise Time
tr
390
ns
Turn-OFF Delay Time
td(off)
510
ns
Fall Time
tf
360
ns
Total Gate Charge
Qg
140
nC
Gate-to-Source Charge
Qgs
43
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=100A, VGS=0V
1.0
Reverse Recovery Time
trr
Qrr
See Fig.3
90
ns
230
nC
Reverse Recovery Charge
VDS=20V, f=1MHz
See Fig.2
VDS=24V, VGS=10V, ID=100A
25
IS=100A, VGS=0V, di/dt=100A/μs
Fig.1 Unclamped Inductive Switching Test Circuit
10V
0V
VDD=24V
VIN
≥50Ω
ID=50A
RL=0.48Ω
VIN
BXL4004
VDD
50Ω
V
Fig.2 Switching Time Test Circuit
10V
0V
L
nC
1.2
D
PW=10μs
D.C.≤1%
VOUT
G
BXL4004
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BXL4004
D
L
G
S
VDD
Driver MOSFET
Ordering Information
Device
BXL4004-1E
Package
Shipping
memo
TO-220-3L
50pcs./magazine
Pb Free and Halogen Free
No.9050-2/7
BXL4004
ID -- VDS
120
100
80
60
VGS=3.5V
40
Tc= --2
5°C
75°C
25°C
60
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID=50A
Single pulse
7
6
5
Tc=75°C
4
25°C
3
--25°C
2
1
0
0
1
2
3
5
4
6
7
8
9
Gate-to-Source Voltage, VGS -- V
5°C
--2
=
Tc
°C
75
3
2
10
7
5
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
Ciss, Coss, Crss -- pF
tr
td(on)
5
3
VDD=24V
VGS=10V
2
3
3
2
1
--25
0
25
50
75
100
125
150
IT16820
IS -- VSD
VGS=0V
Single pulse
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16822
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
Coss
1000
7
5
Crss
3
2
2
10
0.1
4
10000
7
5
2
7
5
3
2
tf
100
A
=50
V, I D
5
.
4
=
VGS
A
=50
, ID
V
0
=1
VGS
6
Diode Forward Voltage, VSD -- V
5
3
7
100000
7
5
td (off)
7
7
IT16818
Single pulse
1000
7
5
3
2
5 7 100
IT16821
SW Time -- ID
1000
6
Case Temperature, Tc -- °C
3
2
1.0
0.1
5
8
0
--50
Source Current, IS -- A
100
7
5
4
RDS(on) -- Tc
9
10
°C
25
3
Gate-to-Source Voltage, VGS -- V
VDS=10V
3
2
2
1
IT16819
| yfs | -- ID
1000
7
5
0
IT16817
RDS(on) -- VGS
8
0
2.0
5°C
25°C
--25°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
Tc=
7
0.2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
9
Forward Transfer Admittance, | yfs | -- S
100
20
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
120
40
20
0
140
--25
°C
140
VDS=10V
Tc=7
5°C
8V
160
Drain Current, ID -- A
Drain Current, ID -- A
160
180
25°
C
180
ID -- VGS
200
4.5V
10V
Tc=25°C
6V
200
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT16823
100
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT16824
No.9050-3/7
BXL4004
VGS -- Qg
10
VDS=24V
ID=100A
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
1
0
20
40
60
80
100
Total Gate Charge, Qg -- nC
PD -- Ta
s
10
10 ms
0m
s
DC
op
era
tio
n
Operation in
this area is
limited by RDS(on).
ID=100A
10
7
5
3
2
140
1.75
1.5
1.0
0.5
0
20
40
60
80
100
120
EAS -- Ta
120
140
160
IT16828
0μ
s
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
IT16825
2.0
10μ
10
s
Tc=25°C
PD -- Tc
80
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
120
1m
0.1 Single pulse
2 3
5 7 1.0
0.1
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
2.5
0
100
7
5
3
2
ASO
IDP=400A(PW≤10μs)
1.0
7
5
3
2
2
0
1000
7
5
3
2
5 7 100
IT16826
75
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT16827
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16829
No.9050-4/7
BXL4004
Magazine Specification
BXL4004-1E
No.9050-5/7
BXL4004
Outline Drawing
BXL4004-1E
Mass (g) Unit
2.0
mm
* For reference
No.9050-6/7
BXL4004
Note on usage : Since the BXL4004 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.9050-7/7
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