CPH3448 D

Ordering number : ENA1648B
CPH3448
Power MOSFET
http://onsemi.com
30V, 50mΩ, 4A, Single N-Channel
Features
• 1.8V drive
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
Gate-to-Source Voltage
VGSS
±12
V
V
Drain Current (DC)
ID
4
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
16
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm)
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-004
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
0.6
2.9
CPH3448-TL-H
CPH3448-TL-W
0.15
Packing Type: TL Marking
LOT No.
0.05
1.6
2.8
0.2
LE
3
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
CPH3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
71514HK TC-00003139/61312TKIM/90110TKIM PE No. A1648-1/5
CPH3448
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
30
V
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
3.4
RDS(on)1
RDS(on)2
ID=2A, VGS=4.5V
ID=1A, VGS=2.5V
38
50
mW
Static Drain-to-Source On-State Resistance
51
72
mW
80
130
mW
0.4
1
mA
±10
mA
1.3
V
S
RDS(on)3
ID=0.5A, VGS=1.8V
Input Capacitance
Ciss
VDS=10V, f=1MHz
430
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
59
pF
Reverse Transfer Capacitance
Crss
pF
td(on)
tr
VDS=10V, f=1MHz
See specified Test Circuit.
38
Turn-ON Delay Time
10
ns
See specified Test Circuit.
41
ns
See specified Test Circuit.
36
ns
Fall Time
td(off)
tf
See specified Test Circuit.
37
ns
Total Gate Charge
Qg
VDS=15V, VGS=4.5V, ID=4A
4.7
nC
0.8
nC
1.1
nC
Rise Time
Turn-OFF Delay Time
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=15V, VGS=4.5V, ID=4A
VDS=15V, VGS=4.5V, ID=4A
Diode Forward Voltage
VSD
IS=4A, VGS=0V
0.82
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD=15V
4.5V
0V
VIN
ID=2A
RL=7.5Ω
PW=10ms
D.C.≤1%
VIN
VOUT
D
G
P.G
50Ω
S
CPH3448
Ordering Information
Device
CPH3448-TL-H
CPH3448-TL-W
Package
Shipping
memo
CPH3
3,000pcs./reel
Pb-Free and Halogen Free
No. A1648-2/5
CPH3448
ID -- VDS
VDS=10V
4.5
4.0
2.0
1.5
1.5V
1.0
3.5
3.0
2.5
2.0
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
40
20
1
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
1.0
1.2
1.4
1.6
1.8
2.0
IT14345
A
=0.5
V, I D
8
.
1
=
VGS
A
=1.0
V, I D
5
.
2
=
2.0A
VGS
, I D=
4.5V
=
VGS
100
80
60
40
20
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14347
IS -- VSD
7
5
VGS=0V
3
2
2
°C
25
--
=
Ta
1.0
7
25
5
°C
75
°C
3
1.0
7
5
5°C
25°C
--25
°C
3
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
0.8
120
0
--60
10
VDS=10V
5
0.6
RDS(on) -- Ta
IT14346
| yfs | -- ID
7
0.4
3
2
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
0
0.2
140
ID=1A
2A
0.5A
100
0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
120
0
0
1.0
IT14344
RDS(on) -- VGS
140
0.1
7
5
3
2
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3
0.01
5
3
td(off)
3
tf
2
td(on)
10
tr
7
5
0.6
0.8
1.0
1.2
IT14349
f=1MHz
7
5
Ciss, Coss, Crss -- pF
100
0.4
Ciss, Coss, Crss -- VDS
1000
2
5
0.2
Diode Forward Voltage, VSD -- V
VDD=15V
VGS=4.5V
7
0
IT14348
SW Time -- ID
5
Switching Time, SW Time -- ns
0.5
VGS=1.2V
0
25°C
1.0
0.5
--25°C
2.5
Ta=7
5°C
Drain Current, ID -- A
3.0
ID -- VGS
5.0
1.8V
7.0V 4.5V
3.5
Drain Current, ID -- A
3.5V
2.5V
4.0
Ciss
3
2
100
7
Coss
5
Crss
3
2
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT14350
10
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14351
No. A1648-3/5
CPH3448
VGS -- Qg
4.0
10
7
5
3.5
3.0
2.5
2.0
1.5
1.0
7
5
3
2
0.1
7
5
0.5
3
2
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
6
IT14352
SOA
IDP=16A (PW≤10ms)
100
1m
ID=4A
3
2
1.0
0
Allowable Power Dissipation, PD -- W
3
2
VDS=15V
ID=4A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.5
DC
10
op
Operation in this area
is limited by RDS(on).
ms
10
era
ms
s
0m
tio
n(
Ta
=
s
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Drain-to-Source Voltage, VDS -- V
3
5
HD15325
When mounted on ceramic substrate
(900mm2×0.8mm)
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15326
No. A1648-4/5
CPH3448
Outline Drawing
CPH3448-TL-H, CPH3448-TL-W
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
Note on usage :Since the CPH3448 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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PS No. A1648-5/5
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