NSR05T40XV2 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. www.onsemi.com Features • • Low Forward Voltage Drop − 530 mV (Typ.) @ IF = 500 mA Low Reverse Current − 3.0 mA (Typ.) @ VR = 40 V 500 mA of Continuous Forward Current ESD Rating: − Human Body Model: Class 3B − Charged Device Model: Class IV High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • • YK SOD−523 CASE 502 YK M 1 2 = Specific Device Code Date Code 2 ANODE ORDERING INFORMATION Device Package NSR05T40XV2T5G SOD−523 (Pb−Free) MAXIMUM RATINGS Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 3.0 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.5 A ESD Rating: ESD >8 >1 kV Human Body Model Charged Device Model 1 1 CATHODE LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Rating MARKING DIAGRAM 2 M • • • • Shipping† 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 0 1 Publication Order Number: NSR05T40XV2/D NSR05T40XV2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Max Unit RqJA PD 489 250 °C/W mW RqJA PD 358 350 °C/W mW TJ, Tstg Typ °C −55 to +150 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 1000 D = 0.5 R(t) (°C/W) 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 1 10 100 1000 Figure 1. Thermal Response (Note 1) 1000 R(t) (°C/W) D = 0.5 100 0.2 10 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR05T40XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 0.5 3.0 5.0 55 360 420 450 530 400 465 525 640 Unit mA Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT 70 pF Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3) trr 20 ns VFRM 540 mV Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4) mV 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 3. Recovery Time Equivalent Test Circuit IF VF tr VFRM VF Time Time Figure 4. Peak Forward Recovery Voltage Definition www.onsemi.com 3 NSR05T40XV2 TYPICAL CHARACTERISTICS 10000 Ir, REVERSE CURRENT (mA) 1000 100 150°C 10 125°C 75°C 1 25°C −25°C 0.1 0.2 0.3 0.4 0.6 0.5 −25°C 0.0001 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) Figure 5. Forward Voltage Figure 6. Leakage Current 1.0 0.8 0.5 0.2 0.1 0.1 0.01 0.001 35 40 35 40 100 1.0 0.8 0.5 0.2 0.1 10 1 0.1 0.01 0.001 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation 100 CT, TOTAL CAPACITANCE (pF) 0.001 VF, FORWARD VOLTAGE (V) 1 f = 1.0 MHz 90 80 70 60 50 40 30 20 10 0 0 25°C 0.01 0.7 10 50 0.1 0.00001 100 0 75°C 1 PF, AVERAGE REVERSE POWER (mW) PF, AVERAGE FORWARD POWER (mW) 0 125°C 10 −55°C −55°C 0.1 150°C 100 IFSM, FORWARD SURGE MAX CURRENT (A) IF, FORWARD CURRENT (mA) 1000 5 10 15 20 25 30 35 40 25 Based on square wave currents TJ = 25°C prior to surge 20 15 10 5 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tP, PULSE ON TIME (ms) Figure 9. Total Capacitance Figure 10. Forward Surge Current www.onsemi.com 4 1000 NSR05T40XV2 PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X L 2X 0.40 L2 BOTTOM VIEW 1.80 0.48 PACKAGE OUTLINE 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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