1N5817 D

1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
•
•
260°C Max for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
ESD Ratings: Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
1N581x
YYWWG
G
A
=Assembly Location
1N581x =Device Number
x= 7, 8, or 9
YY
=Year
WW
=Work Week
G
=Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 10
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5817/D
1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Symbol
1N5817
1N5818
1N5819
Unit
VRRM
VRWM
VR
20
30
40
V
VRSM
24
36
48
V
VR(RMS)
14
21
28
V
Average Rectified Forward Current (Note 1), (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
IO
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W)
TA
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
1.0
85
A
80
75
°C
IFSM
25 (for one cycle)
A
TJ, Tstg
−65 to +125
°C
TJ(pk)
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
Max
Unit
RqJA
80
°C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
Characteristic
Symbol
1N5817
1N5818
1N5819
Unit
(iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
vF
0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL = 25°C)
(TL = 100°C)
IR
1.0
10
1.0
10
1.0
10
Maximum Instantaneous Forward Voltage (Note 2)
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
mA
1N5817, 1N5818, 1N5819
125
NOTE 3. — DETERMINING MAXIMUM RATINGS
TR, REFERENCE TEMPERATURE ( C)
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 VRWM. Proper derating may be
accomplished by use of equation (1).
RqJA (°C/W) = 110
95
80
60
85
75
3.0
2.0
4.0 5.0
7.0
10
VR, DC REVERSE VOLTAGE (VOLTS)
15
125
TR, REFERENCE TEMPERATURE ( C)
Substituting equation (2) into equation (1) yields:
(3)
°
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or
where TJ = 125°C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
40
30
115
105
80
60
85
75
3.0
4.0
5.0
7.0
10
15
20
VR, DC REVERSE VOLTAGE (VOLTS)
30
Figure 2. Maximum Reference Temperature
1N5818
TR, REFERENCE TEMPERATURE ( C)
125
°
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109°C
Step 1. Find @ VR = 9.2 V and RqJA = 80°C/W.
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W
I(FM)
@
= 10 and IF(AV) = 0.5 A.
I(AV)
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 − (80) (0.5) = 69°C.
40
30
23
115
105
RqJA (°C/W) = 110
80
95
60
85
75
4.0
5.0
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.
7.0
10
15
20
VR, DC REVERSE VOLTAGE (VOLTS)
30
Figure 3. Maximum Reference Temperature
1N5819
Table 1. Values for Factor F
Half Wave
Load
Full Wave, Bridge
Full Wave, Center Tapped* †
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
†Use line to center tap voltage for Vin.
1.5
1.5
**Note that VR(PK) ≈ 2.0 Vin(PK).
23
RqJA (°C/W) = 110
95
(4)
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a
12−volt dc supply using a bridge circuit with capacitive filter
such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input
Voltage = 10 V(rms), RqJA = 80°C/W.
Circuit
20
Figure 1. Maximum Reference Temperature
1N5817
(2)
VR(equiv) = Vin(PK) x F
23
105
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
TA(max) = TR − RqJAPF(AV)
30
° 115
(1)
TA(max) = TJ(max) − RqJAPF(AV) − RqJAPR(AV)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RqJA = Junction−to−ambient thermal resistance
TR = TJ(max) − RqJAPR(AV)
40
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3
40
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
R θ JL, THERMAL RESISTANCE, JUNCTION−TO−LEAD (°C/W)
1N5817, 1N5818, 1N5819
90
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
80
70
60
MAXIMUM
50
TYPICAL
40
30
20
10
1
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
5.0
3.0
Sine Wave
I(FM) = π (Resistive Load)
2.0
I(AV)
Capacitive
1.0
Loads
0.7
0.5
dc
20
SQUARE WAVE
0.3
TJ ≈ 125°C
0.2
0.1
0.07
0.05
0.2
0.4
0.6 0.8 1.0
2.0
IF(AV), AVERAGE FORWARD CURRENT (AMP)
L, LEAD LENGTH (INCHES)
Figure 4. Steady−State Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
{
5
10
4.0
Figure 5. Forward Power Dissipation
1N5817−19
1.0
0.7
0.5
0.3
ZqJL(t) = ZqJL • r(t)
0.2
0.1
Ppk
tp
Ppk
TIME
0.07
0.05
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of
an
equivalent square power pulse.
t1
DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where
DTJL = the increase in junction temperature above the lead temperature
0.03
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,
0.02
i.e.:
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
100
200
500
1.0k
2.0k
5.0k
Figure 6. Thermal Response
NOTE 4. — MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie
point temperature cannot be measured.
Mounting Method 1
Mounting Method 3
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
L = 3/8″
L
L
TYPICAL VALUES FOR RqJA IN STILL AIR
Mounting
Method
Lead Length, L (in)
1/8
1/4
1
52
65
2
67
80
3
1/2
50
3/4
RqJA
72
85
°C/W
87
100
°C/W
BOARD GROUND
PLANE
Mounting Method 2
L
°C/W
L
VECTOR PIN MOUNTING
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4
10k
1N5817, 1N5818, 1N5819
NOTE 5. — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
RqS(A)
RqL(A)
RqJ(A)
RqJ(K)
TA(A)
TC(A)
TJ
TL(K)
(Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are:
RqL = 100°C/W/in typically and 120°C/W/in maximum
RqJ = 36°C/W typically and 46°C/W maximum.
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RqS = Thermal Resistance, Heatsink to Ambient
RqL = Thermal Resistance, Lead to Heatsink
RqJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
IFSM, PEAK SURGE CURRENT (AMP)
30
20
10
7.0
TC = 100°C
3.0
25°C
20
1 Cycle
TL = 70°C
f = 60 Hz
10
7.0
5.0
Surge Applied at
Rated Load Conditions
3.0
1.0
2.0
3.0
5.0 7.0 10
20
NUMBER OF CYCLES
1.0
30
40
70 100
Figure 8. Maximum Non−Repetitive Surge Current
0.7
0.5
30
20
0.3
I R, REVERSE CURRENT (mA)
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
TA(K)
TC(K)
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
2.0
RqS(K)
PD
TL(A)
5.0
RqL(K)
0.2
0.1
0.07
0.05
15
100°C
5.0
3.0
2.0
75°C
1.0
0.5
0.3
0.2
0.03
0.02
0.1
TJ = 125°C
25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 1.1
0.05
0.03
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1N5817
1N5818
1N5819
0
4.0
8.0
12
16
20
24
28
32
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
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5
36
40
1N5817, 1N5818, 1N5819
NOTE 6. — HIGH FREQUENCY OPERATION
200
C, CAPACITANCE (pF)
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 10.)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
100
1N5817
70
1N5818
50
1N5819
30
TJ = 25°C
f = 1.0 MHz
20
10
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 10. Typical Capacitance
ORDERING INFORMATION
Package
Shipping †
1N5817
Axial Lead*
1000 Units / Bag
1N5817G
Axial Lead*
1000 Units / Bag
1N5817RL
Axial Lead*
5000 / Tape & Reel
1N5817RLG
Axial Lead*
5000 / Tape & Reel
1N5818
Axial Lead*
1000 Units / Bag
1N5818G
Axial Lead*
1000 Units / Bag
1N5818RL
Axial Lead*
5000 / Tape & Reel
1N5818RLG
Axial Lead*
5000 / Tape & Reel
1N5819
Axial Lead*
1000 Units / Bag
1N5819G
Axial Lead*
1000 Units / Bag
1N5819RL
Axial Lead*
5000 / Tape & Reel
1N5819RLG
Axial Lead*
5000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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6
1N5817, 1N5818, 1N5819
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
B
K
D
DIM
A
B
D
F
K
F
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
F
K
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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1N5817/D
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