80SQ045N D

80SQ045N
Preferred Device
Axial Lead Rectifier
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES
Features
•
•
•
•
•
•
•
•
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High Current Capability
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
High Surge Capacity
These are Pb−Free Devices*
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
MARKING DIAGRAM
220°C Max. for 10 Seconds, 1/16″ from Case
Polarity: Cathode indicated by Polarity Band
ESD Protection: Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
80SQ
045N
YYWW G
G
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VRRM
VRWM
VR
45
V
IO
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
140
A
Operating and Storage Junction Temperature Range (Reverse Voltage Applied)
TJ, Tstg
−65 to +125
°C
dv/dt
10
V/ns
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current TL = 75°C
(PsiJL = 12°C/W, P.C. Board Mounting, Note 2)
Voltage Rate of Change (Rated VR)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
May, 2006 − Rev. 3
ORDERING INFORMATION
Package
Shipping †
80SQ045N
Axial Lead*
500 Units/Box
80SQ045NG
Axial Lead*
500 Units/Box
80SQ045NRL
Axial Lead*
1500/Tape & Reel
80SQ045NRLG
Axial Lead*
1500/Tape & Reel
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
YY
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
80SQ045N/D
80SQ045N
THERMAL CHARACTERISTICS
Characteristic
Symbol
0.9 in x 0.9 in
Copper Pad Size
6.75 in x 6.75 in
Copper Pad Size
Thermal Resistance, Junction−to−Lead
(See Note 2 − Mounting Data)
Thermal Resistance, Junction−to−Ambient (See Note 2 − Mounting Data)
RqJL
RqJA
13
50
12
40
°C/W
Symbol
Max
Unit
Unit
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TL = 25°C)
vF
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1)
TL = 25°C
TL = 100°C
iR
V
0.55
mA
1.0
50
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
30
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
30
10
100°C
1
0.1
75°C
125°C
25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS VOLTAGE (VOLTS)
10
MBR845
1
0.1
0.8
100°C
25°C
0.1
IR, INSTANTANEOUS REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.8
Figure 2. Maximum Forward Voltage
10,000
1E−01
C, CAPACITANCE (pF)
125°C
1E−02
100°C
75°C
1E−03
1E−04
25°C
1E−05
1E−06
75°C
125°C
f = 1 MHz
TJ = 25°C
1000
100
0
5
10 15 20
25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)
45
50
0.1
Figure 3. Typical Reverse Current
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
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2
100
75
9
70
8
IF, AVERAGE FORWARD
CURRENT (AMPS)
COPPER AREA (sq in)
80SQ045N
65
60
55
50
See Note 2
45
40
dc
RqJL = 12°C/W
7
6
SQUARE
WAVE
5
4
3
2
1
35
0
30
0
2
4
6
8
0
10
20
40
60
80
100
120
RqJA (°C/W)
TL, LEAD TEMPERATURE (°C)
Figure 5. RqJA versus Copper Area
Figure 6. Current Derating − Lead
140
4.5
NOTE 2 — MOUNTING DATA
PFO, AVERAGE POWER
DISSIPATION (WATTS)
4
3.5
Mounting Method
SQUARE
WAVE
3
P.C. Board with 6.75 sq. in.
copper surface.
TJ = 125°C
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
2.5
dc
2
1.5
1
0.5
0
0
2
4
6
10
8
IO, AVERAGE FORWARD CURRENT (AMPS)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 7. Forward Power Dissipation
1
L = 3/8,
Board Ground Plane
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.01
Copper Area = 0.271 sq. in.
0.01
0.001
0.0001
t1
RqJA = 61.8 °C/W
SINGLE PULSE
0.001
0.01
0.1
1.0
t, TIME (sec)
Figure 8. Thermal Response, Junction−to−Ambient
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3
t2
DUTY CYCLE, D = t1/t2
10
100
1000
80SQ045N
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
ISSUE G
K
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
1
B
2
K
DIM
A
B
D
K
INCHES
MIN
MAX
0.287
0.374
0.189
0.209
0.047
0.051
1.000
−−−
MILLIMETERS
MIN
MAX
7.30
9.50
4.80
5.30
1.20
1.30
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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80SQ045N/D
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