BAS40 04LT1 D

BAS40-04LT1G,
SBAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
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40 VOLTS
SCHOTTKY BARRIER DIODES
Extremely Fast Switching Speed
Low Forward Voltage
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
TJ, Tstg
−55 to +150
C
Forward Continuous Current
IFM
120
Single Forward Current
tv1s
t v 10 ms
IFSM
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
RqJA
Operating Junction and Storage
Temperature Range
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
CB MG
G
mA
1
mA
200
600
508
311
SOT−23 (TO−236)
CASE 318
STYLE 11
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
CB
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS40−04LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAS40−04LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1
Publication Order Number:
BAS40−04LT1/D
BAS40−04LT1G, SBAS40−04LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 1.0 mA)
VF
Forward Voltage
(IF = 10 mA)
VF
Forward Voltage
(IF = 40 mA)
VF
IR , REVERSE CURRENT (A)
100
10
150C
1.0
125C
85C
25C
-40C
0.1
0
0.1
0.2
0.3
-55C
0.4
Max
40
−
−
5.0
−
1.0
−
380
−
500
−
1.0
Unit
V
pF
mA
mV
mV
V
TA = 150C
125C
10
85C
1.0
0.1
25C
0.01
0.001
0.5
0.6
0.7
0
0.8
5.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10
15
VR, REVERSE VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
20
Figure 2. Reverse Current versus Reverse
Voltage
3.5
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
Min
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
35
40
25
BAS40−04LT1G, SBAS40−04LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAS40−04LT1/D