BAS40LT1 D

BAS40L, SBAS40L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
40 VOLTS
SCHOTTKY BARRIER DIODES
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
TJ, Tstg
−55 to +150
°C
IF
120
mA
Operating Junction and Storage
Temperature Range
Forward Continuous Current
Forward Surge Current
tv1s
t v 10 ms
IFSM
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
RqJA
200
600
508
311
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
MARKING DIAGRAM
mA
B1 M G
G
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
B1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAS40LT1G,
SBAS40LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAS40LT3G,
SBAS40LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 10
1
Publication Order Number:
BAS40LT1/D
BAS40L, SBAS40L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Forward Voltage
(IF = 40 mAdc)
VF
IR , REVERSE CURRENT (μA)
100
10
150°C
1.0
125°C
85°C
25°C
-40°C
0.1
0
0.1
0.2
0.3
-55°C
0.4
Max
40
−
−
5.0
−
1.0
−
380
−
500
−
1.0
Unit
V
pF
mAdc
mVdc
mVdc
Vdc
TA = 150°C
125°C
10
85°C
1.0
0.1
25°C
0.01
0.001
0.5
0.6
0.7
0
0.8
5.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10
15
VR, REVERSE VOLTAGE (VOLTS)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5.0
20
Figure 2. Reverse Current versus Reverse
Voltage
3.5
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
Min
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
35
40
25
BAS40L, SBAS40L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
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Sales Representative
BAS40LT1/D
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