BAT54WT1 D

BAT54W
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
1.6
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Rating
Non−Repetitive Peak Forward
Current,
tp < 10 msec
IFSM
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
SOT−323
CASE 419
STYLE 2
3
CATHODE
1
ANODE
MARKING DIAGRAM
mA
600
B4M G
G
mA
300
1
Junction Temperature
TJ
−55 to 125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
B4
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAT54WT1G
SOT−323
(Pb−Free)
3,000 /
Tape & Reel
NSVBAT54WT1G
SOT−323
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
Publication Order Number:
BAT54WT1/D
BAT54W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
Min
Typ
Max
30
−
−
−
7.6
10
−
0.5
2.0
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
−
−
5.0
Unit
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
V
pF
mAdc
V
ns
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
0.1 mF
tp
T
IF
trr
10%
T
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54W
100
IF, FORWARD CURRENT (mA)
1 25°C
85°C
10
1 50°C
1.0
25°C
0.1
0.0
−40°C
−55°C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
1000
100
TA = 125°C
10
1.0
TA = 85°C
0.1
0.01
TA = 25°C
0.001
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
14
CT, TOTAL CAPACITANCE (pF)
IR, REVERSE CURRENT (mA)
TA = 150°C
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54W
PACKAGE DIMENSIONS
SOT−323 (SC−70)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
L
A1
MIN
0.80
0.00
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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Sales Representative
BAT54WT1/D
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