MBR1080 D

MBR1080G,
MBR1090G,
MBR10100G,
NRVB10100G
SWITCHMODE
Power Rectifiers
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Features










Guard−Ring for Stress Protection
Low Forward Voltage
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 80 to 100 VOLTS
TO−220AC
CASE 221B
Mechanical Characteristics
3
 Case: Epoxy, Molded
 Weight: 1.9 Grams (Approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal
1, 4
MARKING DIAGRAM
Leads are Readily Solderable
 Lead Temperature for Soldering Purposes:

260C Max. for 10 Seconds
ESD Rating:
 Human Body Model = 3B
 Machine Model = C
AY WWG
B10x0
KA
A
Y
WW
G
B10x0
x
KA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Device Code
= 8, 9 or 10
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR1080G
TO−220
(Pb−Free)
50 Units/Rail
MBR1090G
TO−220
(Pb−Free)
50 Units/Rail
MBR10100G
TO−220
(Pb−Free)
50 Units/Rail
NRVB10100G
TO−220
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 1
1
Publication Order Number:
MBR1080/D
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
MAXIMUM RATINGS
Rating
Symbol
MBR/NRVB
1080
1090
10100
80
90
100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
Average Rectified Forward Current (Rated VR) TC = 133C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
C
Storage Temperature
Tstg
*65 to +175
C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
10
A
A
20
A
150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
2.0
C/W
Maximum Thermal Resistance, Junction−to−Ambient
RqJA
60
C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125C)
(iF = 10 Amps, TC = 25C)
(iF = 20 Amps, TC = 125C)
(iF = 20 Amps, TC = 25C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125C)
(Rated dc Voltage, TC = 25C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
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2
0.7
0.8
0.85
0.95
6.0
0.10
V
mA
10
50
TJ = 150C
20
IR , REVERSE CURRENT (mA)
150C
10
100C
125C
5.0
3.0
TJ = 25C
1.0
1.0
125C
0.1
100C
0.01
0.001
25C
0.5
0.0001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
0.7
1.0
0.9
20
40
60
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
RATED VOLTAGE APPLIED
RqJC = 2C/W
dc
15
SQUARE WAVE
10
5.0
0
100
120
140
TC, CASE TEMPERATURE (C)
160
20
(HEATSINK)
RqJA = 16C/W
(NO HEATSINK)
RqJA = 60C/W
15
dc
5.0
180
SQUARE WAVE
0
0
20
40
60
8.0
IPK/IAV = p
7.0
6.0
IPK/IAV = 5.0
5.0
IPK/IAV = 10
dc
IPK/IAV = 20
3.0
SQUARE WAVE
2.0
1.0
0
1.0
100
120
140
160
Figure 4. Typical Current Derating, Ambient
TA = 25C
0
80
TA, AMBIENT TEMPERATURE (C)
10
4.0
RATED VOLTAGE
APPLIED
dc
10
Figure 3. Typical Current Derating, Case
9.0
100
80
VR, REVERSE VOLTAGE (VOLTS)
20
80
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
IF(AV), AVERAGE CURRENT (AMPS)
Figure 5. Forward Power Dissipation
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3
10
180
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
C
B
Q
F
T
S
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
3
U
H
K
L
R
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
J
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR1080/D