MBR140ESF D

MBR140ESF, NRVB140ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
SOD−123FL
CASE 498
Features
•
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Reverse Leakage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
♦ Human Body Model = 3B
♦ Machine Model = M4
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
•
•
•
•
•
•
Device Marking: E4F
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 3
1
MARKING DIAGRAM
E4FMG
G
E4F
M
G
= Specific Device Code
= Date Code
= Pb−Free Package)
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBR140ESFT1G
SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
MBR140ESFT3G
SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
NRVB140ESFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel **
NRVB140ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
Publication Order Number:
MBR140ESF/D
MBR140ESF, NRVB140ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
1.0
A
Peak Repetitive Forward Current
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 175
°C
Operating Junction Temperature
TJ
−55 to 175
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
30
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
Value
Unit
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
Symbol
Value
Unit
VF
TJ = 25°C
V
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 1.0 A)
0.56
IR
Maximum Instantaneous Reverse Current (Note 3)
(VR = 40 V)
TJ = 25°C
30
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
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2
mA
MBR140ESF, NRVB140ESF
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10.0
1.0
TA = 125°C
TA = 150°C
TA = 85°C
IR, INSTANTANEOUS REVERSE CURRENT (mA)
0.10
0.0
TA = 25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TA = 150°C
1.0
TA = 125°C
TA = 85°C
TA = 25°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10.0
1.E−01
TA = 150°C
1.E−03
1.E−02
TA = 125°C
1.E−04
TA = 125°C
1.E−03
TA = 85°C
1.E−05
TA = 85°C
1.E−04
TA = 25°C
1.E−06
1.E−07
TA = 150°C
0
TA = 25°C
1.E−05
5
10
15
20
25
30
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
40
1.E−06
0
2.00
TJ = 25°C
100
40
Figure 4. Maximum Reverse Characteristics
RqJA = 82°C/W
1.80
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
Figure 3. Typical Reverse Characteristics
5
10
15
20
25
30
35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
dc
1.60
1.40
1.20
SQUARE WAVE
1.00
0.80
0.60
0.40
0.20
10
1
0.00
10
VR, REVERSE VOLTAGE (V)
0
Figure 5. Typical Junction Capacitance
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating, Case
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3
140
MBR140ESF, NRVB140ESF
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
10
9
TA = 150°C
IPK/IAV = 20
8
7
6
5
SQUARE
WAVE
4
IPK/IAV = 10
3
2
IPK/IAV = 5
1
0
0.00
dc
0.20
0.40
0.60
0.80
1.00
1.20
1.40
IF(AV), AVERAGE FORWARD CURRENT (A)
r(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Forward Power Dissipation
1000
D = 0.5
100
0.2
0.1
0.05
10
P(pk)
0.01
t1
t2
1
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001 0.00001
0.0001
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.001
0.01
0.1
t1, TIME (sec)
Figure 8. Thermal Response
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4
1
qJA = 321.8 °C/W
10
100
1000
MBR140ESF, NRVB140ESF
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
E
D
1
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
2
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
END VIEW
TOP VIEW
DIM
A
A1
b
c
D
E
L
HE
q
A1
q
HE
2X
MILLIMETERS
NOM
MAX
0.95
0.98
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
RECOMMENDED
SOLDERING FOOTPRINT*
c
SIDE VIEW
2X
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
L
b
2X
1.22
BOTTOM VIEW
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
4.20
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
2X
1.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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MBR140ESF/D