MBR2535CTL D

MBR2535CTLG
Switch-mode
Power Rectifier
Features and Benefits
•
•
•
•
•
•
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
150°C Operating Junction Temperature
25 A Total (12.5 A Per Diode Leg)
This Device is Pb−Free and is RoHS Compliant*
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 35 VOLTS
Applications
• Power Supply – Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
•
•
•
•
•
•
4
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating:
Human Body Model 3B
Machine Model C
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AYWW
B2535LG
AKA
A
= Assembly Location
Y
= Year
WW
= Work Week
B2535L = Device Code
G
= Pb−Free Package
AKA
= Polarity Designator
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 6
1
Device
Package
Shipping
MBR2535CTLG
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
MBR2535CTL/D
MBR2535CTLG
MAXIMUM RATINGS (Per Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
V
Average Rectified Forward Current
(TC = 142°C per Diode)
(TC = 142°C per Device)
IF(AV)
Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C)
IFRM
25
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Controlled Avalanche Energy
Waval
20
mJ
Rating
A
12.5
25
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Conditions
Symbol
Max
Unit
Maximum Thermal Resistance, Junction−to−Case
Min. Pad
RqJC
2.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
Min. Pad
RqJA
75.0
Min
Typical
Max
−
−
−
0.51
0.41
0.33
0.55
0.47
0.41
−
−
0.8
300
5.0
500
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 2)
(iF = 25 Amps, Tj = 25°C)
(iF = 12.5 Amps, Tj = 25°C)
(iF = 12.5 Amps, Tj = 125°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
iR
Unit
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
MBR2535CTLG
150°C
10
125°C
1.0
25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
150°C
10
125°C
1.0
25°C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage
IR, REVERSE CURRENT (mA)
1,000
TJ = 125°C
100
TJ = 100°C
10
1.0
TJ = 25°C
0.1
5.0
10
15
20
25
30
35
dc
RqJA = 16°C/W
12
10
8.0
6.0
dc
4.0
RqJA = 75°C/W
No Heatsink
0
16
14
Square Wave
12
10
8.0
6.0
4.0
2.0
0
120
125
130
135
140
145
150
Figure 4. Current Derating, Case, Per Leg
Square Wave
2.0
0
dc
18
Figure 3. Typical Reverse Current, Per Leg
18
14
20
TC, CASE TEMPERATURE (°C)
20
16
22
VR, REVERSE VOLTAGE (V)
PF(AV), AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
25
50
Square Wave
75
100
125
150
175
16
14
TJ = 150°C
12
10
Square Wave
8.0
dc
6.0
4.0
2.0
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating, Ambient, Per Leg
Figure 6. Forward Power Dissipation
www.onsemi.com
3
155
MBR2535CTLG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR2535CTL/D