MBR41H100CT D

MBR41H100CT,
NRVBB41H100CT Series
Switch-mode
Power Rectifier
100 V, 40 A
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Features and Benefits
•
•
•
•
•
•
•
•
•
1
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MBR41H100CTH and MBRB41H100CT−1H are Halide−Free
2, 4
3
TO−220
CASE 221A
STYLE 6
1
2
AYWW
B41H100G
AKA
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B41H100x
AKA
1
3
Mechanical Characteristics:
4
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO−220)
•
D2PAK 3
CASE 418B
STYLE 3
4
• Power Supply − Output Rectification
• Power Management
• Instrumentation
AYWW
B41H100x
AKA
3
Applications
•
MARKING
DIAGRAMS
4
1.7 Grams (D2PAK)
1.5 Grams (TO−262)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
12
3
A
= Assembly Location
Y
= Year
WW = Work Week
x
= G or H
G = Pb−Free Package
H
= Halide−Free Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
MBR41H100CT/D
MBR41H100CT, NRVBB41H100CT Series
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 150°C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 145°C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
A
20
A
40
A
350
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
400
mJ
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
V
> 400
> 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Value
RqJC
RqJA
2.0
70
Symbol
Value
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
Unit
V
0.80
0.67
0.90
0.76
mA
10
0.01
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1000
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR41H100CT, NRVBB41H100CT Series
1000
100
TJ = 150°C
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.2
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
TJ = 125°C
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−06
1.0E−07
1.0E−07
1.0E−08
0
40
20
60
80
100
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
dc
25
SQUARE WAVE
15
10
5
110
40
20
VR, REVERSE VOLTAGE (VOLTS)
35
30
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
TJ = 150°C
1.0E−03
1.0E−04
0
100
1.2
1.0
1.0E−02
TJ = 150°C
1.0E−03
20
0.8
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
1.0E−02
0.6
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
50
45
40
35
SQUARE
30
25
DC
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
50
MBR41H100CT, NRVBB41H100CT Series
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
20
40
80
60
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
10
D = 0.5
0.2
0.1
0.05
1
0.01
0.1
P(pk)
t1
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
P(pk)
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case
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4
10
100
1000
MBR41H100CT, NRVBB41H100CT Series
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 10. Test Circuit
t1
t2
t
Figure 11. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR41H100CT, NRVBB41H100CT Series
ORDERING INFORMATION
Package
Shipping†
MBR41H100CTG
TO−220
(Pb−Free)
50 Units / Rail
MBR41H100CTH
TO−220
(Halide−Free)
50 Units / Rail
MBRB41H100CT−1G
I2PAK
(Pb−Free)
50 Units / Rail
MBRB41H100CT−1H
(In Development)
I2PAK
(Halide−Free)
50 Units / Rail
MBRB41H100CTT4G
D2PAK 3
(Pb−Free)
800 Units / Tape & Reel
NRVBB41H100CTT4G*
D2PAK 3
(Pb−Free)
800 Units / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and
PPAP Capable.
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6
MBR41H100CT, NRVBB41H100CT Series
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
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7
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR41H100CT, NRVBB41H100CT Series
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
U
L
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR41H100CT, NRVBB41H100CT Series
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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For additional information, please contact your local
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MBR41H100CT/D