MCR69 D

MCR69−2, MCR69−3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Features
• Glass-Passivated Junctions for Greater Parameter Stability and
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Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling
•
•
•
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
High Discharge Current
Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
High Capacitor Discharge Current, 750 Amps
Pb−Free Packages are Available*
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = 40 to +125°C, Gate Open)
MCR69−2
MCR69−3
VDRM,
VRRM
Peak Discharge Current (Note 2)
Value
Unit
4
50
100
ITM
750
A
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
ITSM
300
A
Circuit Fusing Considerations (t = 8.3 ms)
I2 t
375
A2s
Forward Peak Gate Current
(t ≤ 1.0 s, TC = 85°C)
IGM
2.0
A
Forward Peak Gate Power
(t ≤ 1.0 s, TC = 85°C)
PGM
20
W
PG(AV)
0.5
W
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
−
8.0
in. lb.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various
duration of an exponentially decaying current waveform, tw is defined as
5 time constants of an exponentially decaying current pulse.
3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 1
TO−220AB
CASE 221A
STYLE 3
1
2
AYWW
MCR69x
AKA
3
A
= Assembly Location
Y
= Year
WW
= Work Week
MCR69 = Device Code
x
= 2 or 3
AKA
= Location Code
PIN ASSIGNMENT
Operating Junction Temperature Range
Mounting Torque
MARKING
DIAGRAM
V
1
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping†
MCR69−2
TO220AB
500/Box
MCR69−2G
TO220AB
(Pb−Free)
500/Box
MCR69−3
TO220AB
500/Box
MCR69−3G
TO220AB
(Pb−Free)
500/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MCR69/D
MCR69−2, MCR69−3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
1.5
°C/W
Thermal Resistance, Junction−to−Ambient
RJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
A
mA
−
−
−
6.0
1.8
−
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
IDRM, IRRM
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 50 A) (Note 4)
(ITM = 750 A, tw = 1 ms) (Note 5)
VTM
V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 )
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 )
VGT
−
0.65
1.5
V
Gate Non−Trigger Voltage
(VD = 12 Vdc, RL = 100 , TJ = 125°C)
VGD
0.2
0.40
−
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latching Current
(VD = 12 Vdc, IG = 150 mA)
IL
−
−
60
mA
Gate Controlled Turn-On Time (Note 6)
(VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)
tgt
−
1.0
−
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125°C)
dv/dt
10
−
−
V/s
Critical Rate-of-Rise of On-State Current
IG = 150 mA
di/dt
−
−
100
A/s
DYNAMIC CHARACTERISTICS
TJ = 125°C
4. Pulse duration 300 s, duty cycle 2%.
5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
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2
MCR69−2, MCR69−3
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
I TM , PEAK DISCHARGE CURRENT (AMPS)
Anode −
NORMALIZED PEAK CURRENT
1000
300
200
100
50
20
0.5
ITM
tw
tw = 5 time constants
1.0
0.8
0.6
0.4
0.2
0
5.0
2.0
1.0
10
20
25
50
tw, PULSE CURRENT DURATION (ms)
75
100
125
Figure 2. Peak Capacitor Discharge Current
Derating
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Figure 1. Peak Capacitor Discharge Current
32
125
120
115
Half Wave
24
110
dc
105
dc
16
100
95
90
8.0
Half Wave
85
80
75
50
TC, CASE TEMPERATURE (°C)
4.0
8.0
12
16
20
0
TJ = 125°C
0
4.0
8.0
12
16
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 3. Current Derating
Figure 4. Maximum Power Dissipation
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3
20
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MCR69−2, MCR69−3
1
0.7
0.5
0.3
0.2
ZJC(t) = RJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
1k
2k 3k
5k
10 k
t, TIME (ms)
Figure 5. Thermal Response
NORMALIZED GATE TRIGGER VOLTAGE
5.0
VD = 12 Volts
RL = 100 3.0
2.0
1.0
0.5
0.3
0.2
−60
−40
−20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
1.4
1.0
0.8
0.5
−60
140
VD = 12 Volts
RL = 100 1.2
−40
−20
0
20
2.0
VD = 12 Volts
ITM = 100 mA
1.0
0.8
0.5
−40
−20
60
80
100
Figure 7. Gate Trigger Voltage
3.0
0.3
−60
40
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current
NORMALIZED HOLD CURRENT
NORMALIZED GATE TRIGGER CURRENT
10
0
40
20
60
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Holding Current
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4
100
120
140
120
140
MCR69−2, MCR69−3
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
B
F
−T−
T
4
Q
SEATING
PLANE
C
S
A
1 2 3
H
K
U
Z
L
V
R
G
D
J
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 3:
PIN 1.
2.
3.
4.
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5
CATHODE
ANODE
GATE
ANODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MCR69−2, MCR69−3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
local Sales Representative.
MCR69/D