MCR716 D

MCR716, MCR718
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
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SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
Features
•
•
•
•
•
•
•
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
G
A
K
4
1 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 110°C, Sine Wave,
MCR716
50 to 60 Hz, RGK = 1 k)
MCR718
VDRM,
VRRM
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
Average On−State Current
(180° Conduction Angles; TC = 90°C)
Value
Unit
3
V
DPAK
CASE 369C
STYLE 4
4.0
A
MARKING DIAGRAM
IT(AV)
2.6
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM
25
A
Circuit Fusing Consideration (t = 8.3 msec)
I2t
2.6
A2sec
PGM
0.5
W
PG(AV)
0.1
W
IGM
0.2
A
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C)
400
600
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
YWW
MCR
71xG
Y
WW
MCR71x
G
= Year
= Work Week
= Device Code
x= 6 or 8
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 8
1
Publication Order Number:
MCR716/D
MCR716, MCR718
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RJC
3.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RJA
80
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
−
−
−
−
10
200
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 k (Note 3)
(VAK = Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
IDRM
IRRM
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage (IGR = 10 A)
VRGM
10
12.5
18
V
Peak Reverse Gate Blocking Current (VGR = 10 V)
IRGM
−
−
1.2
A
Peak Forward On−State Voltage (Note 4)
(ITM = 5.0 A Peak)
(ITM = 8.2 A Peak)
VTM
−
−
1.3
1.5
1.5
2.2
1.0
−
25
−
75
300
0.3
−
0.2
0.55
−
−
0.8
1.0
−
0.4
−
1.0
−
5.0
10
−
−
−
−
5.0
10
Gate Trigger Current (Continuous dc) (Note 5)
(VD = 12 Vdc, RL = 30 )
Gate Trigger Voltage (Continuous dc) (Note 5)
(VD = 12 Vdc, RL = 30 )
Holding Current (Note 3)
(VD = 12 Vdc, Initiating Current = 20 mA, RGK = 1 k)
TC = 25°C
TC = −40°C
TC = 25°C
TC = −40°C
TC = 110°C
TC = 25°C
TC = −40°C
IGT
VGT
IH
V
A
V
mA
Latching Current (Note 3) (RGK = 1 k
(VD = 12 Vdc, IG = 2.0 mA, TC = 25°C)
(VD = 12 Vdc, IG = 2.0 mA, TC = −40°C)
IL
mA
Total Turn-On Time
(Source Voltage = 12 V, RS = 6 k, IT = 8 A(pk), RGK = 1 k)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
tgt
−
2.0
5.0
s
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, RGK = 1 k, Exponential Waveform, TJ = 110°C)
dv/dt
5.0
10
−
V/s
Repetitive Critical Rate of Rise of On−State Current
(f = 60 Hz, IPK = 30 A, PW = 100 s, dIG/dt = 1 A/s)
di/dt
−
−
100
A/s
DYNAMIC CHARACTERISTICS
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or RGK = 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width ≤ 2 ms, Duty Cycle ≤ 2%.
5. RGK current not included in measurements.
ORDERING INFORMATION
Device
MCR716T4
MCR716T4G
MCR718T4
MCR718T4G
Package
Shipping†
DPAK
DPAK
(Pb−Free)
DPAK
2500 / Tape and Reel
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current
Anode +
VTM
Symbol
Parameter
VDRM
Peak Repetitive Off−State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off−State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On−State Voltage
IH
Holding Current
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
110
P(AV), AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
Anode −
30°
60°
90°
120°
180°
105
DC
100
95
0
1.0
2.0
3.0
3.0
90°
60°
30°
2.0
1.0
0
0
1.0
2.0
3.0
4.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
Typical @ TJ = 25°C
Maximum @ TJ = 110°C
10
Maximum @ TJ = 25°C
1.0
0.1
1.0
DC
180°
120°
4.0
5.0
4.0
100
0.5
5.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1.0
ZJC(t) = RJC(t)•r(t)
0.1
0.01
0.1
1.0
10
100
1000
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
5.0
10,000
MCR716, MCR718
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT ( A)
35
30
25
20
15
-40
0
-20
0
20
40
60
80
100 110
-40
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.0
2.0
IL , LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
0.5
1.5
1.0
0.5
0
-40
-20
0
20
40
60
80
1.5
1.0
0.5
0
-40
100 110
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR716, MCR718
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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For additional information, please contact your local
Sales Representative
MCR716/D