NYC222, NYC226, NYC228 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. www.onsemi.com SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Features • • • • • Blocking Voltage to 600 V High Surge Current − 15 A Very Low Forward “On” Voltage at High Current Low-Cost Surface Mount SOT−223 Package These are Pb−Free Devices G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = *40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) NYC222 NYC226 NYC228 VDRM, VRRM On-State Current RMS (180° Conduction Angles, TC = 80°C) IT(RMS) 1.5 A Average On−State Current, (TC = 65°C, f = 60 Hz, Time = 1 sec) IT(RMS) 2.0 A ITSM 15 A I2t 0.9 A2s PGM 0.5 W PG(AV) 0.1 W IFGM 0.2 A Peak Non-repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) Forward Average Gate Power (t = 8.3 msec, TA = 25°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C) Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C) Value Unit V SOT−223 CASE 318E STYLE 11 50 400 600 AYW 22xSTG G 1 VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. A Y W 22xST G = Assembly Location = Year = Work Week = Specific Device Code x = 2, 6 or 8 = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 K (Cathode) 2 A (Anode) 3 G (Gate) 4 A (Anode) ORDERING INFORMATION Shipping† Device Package NYC222STT1G SOT−223 (Pb−Free) 1000 /Tape & Reel NYC226STT1G SOT−223 (Pb−Free) 1000 /Tape & Reel NYC228STT1G SOT−223 (Pb−Free) 1000 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 2 1 Publication Order Number: NYC222/D NYC222, NYC226, NYC228 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient PCB Mounted Characteristic RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy RqJT 25 °C/W TL 260 °C Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 200 mA mA VTM − 1.2 1.7 V OFF CHARACTERISTICS IDRM, IRRM Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM/VRRM; RGK = 1000 W) TC = 25°C TC = 110°C ON CHARACTERISTICS Peak Forward On−State Voltage (Note 2) (ITM = 2.2 A Peak) Gate Trigger Current (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) TC = 25°C TC = −40°C IGT − − 30 − 200 500 mA Gate Trigger Voltage (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) TC = 25°C TC = −40°C VGT − − − − 0.8 1.2 V Gate Non−Trigger Voltage (VAK = VDRM , RL = 100 W) VGD 0.1 − − V TC = 110°C Holding Current (VAK = 12 V, RGK = 1000 W) Initiating Current = 200 mA TC = 25°C TC = −40°C − − 2.0 − 5.0 10 IH mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (TC = 110°C) dv/dt − 25 − V/ms Critical Rate of Rise of On−State Current (TC = 110°C, IG = 2 x IGT, RGK = 1 kW) di/dt − 20 − A/ms 2. Pulse Width = 1.0 ms, Duty Cycle v 1%. 3. RGK Current not included in measurement. Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − www.onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) NYC222, NYC226, NYC228 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING 140 100 a = 180° a = CONDUCTION ANGLE 60 dc 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ON‐STATE CURRENT (AMPS) 120 100 80 60 dc 40 a = 180° a = CONDUCTION ANGLE 20 0 0 0.2 0.4 3.0 TJ = 110°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0 0.5 0.8 Figure 2. Maximum Ambient Temperature 5.0 2.0 0.6 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) Figure 1. Maximum Case Temperature I T , INSTANTANEOUS ON‐STATE CURRENT (AMP) 0 140 1.5 1.0 2.0 VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) Figure 3. Typical Forward Voltage www.onsemi.com 3 2.5 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) NYC222, NYC226, NYC228 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 1000 t, TIME (ms) Figure 4. Thermal Response TYPICAL CHARACTERISTICS 100 I GT GATE TRIGGER CURRENT ( μA) VAK = 7.0 V RL = 100 0.7 0.6 0.5 0.4 0.3 -75 -50 -25 0 25 50 100 110 75 50 30 20 10 5.0 3.0 2.0 1.0 -40 -20 0 20 60 80 100 110 TJ JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current 2.0 10 1.8 I H , HOLDING CURRENT (mA) 40 TJ, JUNCTION TEMPERATURE (°C) P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS) VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.8 1.6 VAK = 12 V RL = 100 W 30° 1.4 5.0 60° 90° 120 ° 180° 1.2 1.0 dc 0.8 0.6 2.0 0.4 0.2 1.0 -40 -20 0 20 40 60 80 100 110 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ, JUNCTION TEMPERATURE (°C) IT(AV), AVERAGE ON‐STATE CURRENT (AMPS) Figure 7. Typical Holding Current Figure 8. Power Dissipation www.onsemi.com 4 1.4 1.6 NYC222, NYC226, NYC228 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A q L L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 − 0° SOLDERING FOOTPRINT 10° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 STYLE 11: PIN 1. 10°MT 1 2. MT 2 3. GATE 4. MT 2 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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