BAL99LT1 D

BAL99LT1G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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ANODE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
70
Vdc
Peak Forward Current
IF
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CATHODE
2
3
SOT−23
CASE 318
STYLE 18
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
MARKING DIAGRAM
JF MG
G
JF Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAL99LT1G
Package
Shipping†
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 6
1
Publication Order Number:
BAL99LT1/D
BAL99LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
2.5
30
50
70
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
V(BR)
Reverse Breakdown Voltage, (IR = 100 mAdc)
mAdc
Vdc
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Recovery Current, (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 W)
QS
−
45
pC
Diode Capacitance, (VR = 0, f = 1.0 MHz)
CD
−
1.5
pF
Reverse Recovery Time,
(IF = IR = 10 mAdc, RL = 100 W, measured at IR = 1.0 mAdc)
trr
−
6.0
ns
VFR
−
1.75
Vdc
Forward Recovery Voltage, (IF = 10 mAdc, tr = 20 ns)
mV
TYPICAL CHARACTERISTICS
1.0
100
0.1
10
I R, REVERSE CURRENT (A)
μ
IF, FORWARD CURRENT (A)
TA = 150°C
0.01
0.001
150°C
0.0001
-55°C
125°C 85°C 55°C
0.2
0.3
0.4
0.5
-40°C
0.6 0.7
0.8
0.9
1.0
1.1
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
TA = -55°C
0.0001
0
10
VF, FORWARD VOLTAGE (VOLTS)
20
30
0.58
0.56
0.54
0.52
0.50
0.48
0
1
50
Figure 2. Leakage Current
0.60
0.46
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
CD , DIODE CAPACITANCE (pF)
0.00001
0.1
25°C
TA = 125°C
2
3
4
5
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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2
7
8
60
70
BAL99LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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3
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BAL99LT1/D
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