BAS116LT1 D

BAS116L
Switching Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
•
•
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Use BAS116LT1G to order the 7 inch/3,000 unit reel
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
ANODE
3
CATHODE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Peak Forward Surge Current
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
THERMAL CHARACTERISTICS
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
JV M G
G
JV = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS116LT1G
SBAS116LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
BAS116LT3G
NSVBAS116LT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 11
1
Publication Order Number:
BAS116LT1/D
BAS116L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
75
−
Vdc
Reverse Voltage Leakage Current (VR = 75 Vdc)
Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)
IR
−
−
5.0
80
nAdc
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 150 mAdc)
VF
−
−
−
−
900
1000
1100
1250
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD
−
2.0
pF
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
trr
−
3.0
ms
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 mAdc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W Output
Pulse
Generator
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS116L
TYPICAL CHARACTERISTICS
100
IR, REVERSE CURRENT (nA)
100
150°C
25°C
−55°C
10
1
0.1
TA = 150°C
10
1.0
25°C
0.1
−55°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.2
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1,000
TA = 25°C
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
70
80
70
80
BAS116L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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www.onsemi.com
4
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS116LT1/D
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