BAS16DXV6 D

BAS16DXV6
Dual Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IF
200
mA
IFM(surge)
500
mA
Peak Forward Surge Current
Pulse Width = 10 ms
6
1
4
3
6
1
Symbol
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
357
2.9
mW
mW/°C
350
°C/W
Max
Unit
500
4.0
mW
mW/°C
°C/W
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250
TJ, Tstg
−55 to +150
Junction and Storage Temperature
2
3
SOT−563
CASE 463A
PLASTIC
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
54
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
MARKING DIAGRAM
A6 MG
G
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
BAS16DXV6T1G
SOT−563
(Pb−Free)
4000 / Tape &
Reel
SBAS16DXV6T1G
SOT−563
(Pb−Free)
4000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 5
1
Publication Order Number:
BAS16DXV6/D
BAS16DXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
−
−
715
855
1000
1250
−
−
−
1.0
50
30
CD
−
2.0
pF
trr
−
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS
−
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
−
1.75
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
Unit
mV
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BAS16DXV6
1 ns MAX
DUT
500 W
t
trr
10%
tif
50 W
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
500 W
VC
DUT
BAW62
VCM
20 ns MAX
D1
t
10%
243 pF
100 KW
Qa
VCM +
C
DUTY CYCLE = 2%
t
90%
Vf
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
450 W
1 KW
V
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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3
50 W
BAS16DXV6
TYPICAL CHARACTERISTICS
10
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
TA = 150°C
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 5. Leakage Current
CD, DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 6. Capacitance
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 7. Normalized Thermal Response
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4
10
100
1000
BAS16DXV6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
6
5
1
2
A
L
4
E
−Y−
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
C
5 PL
6
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
HE
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 10:
PIN 1. CATHODE 1
2. N/C
3. CATHODE 2
4. ANODE 2
5. N/C
6. ANODE 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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BAS16DXV6/D
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