BAS16M3 D

BAS16M3T5G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS
Symbol
Value
Unit
Continuous Reverse Voltage
Rating
VR
100
Vdc
Peak Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
PD
RqJA
PD
Max
Unit
260
mW
2.0
mW/°C
490
°C/W
580
mW
4.6
mW/°C
RqJA
215
°C/W
TJ, Tstg
−55 to
+150
°C
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
1
2
A6
M
SOT−723
CASE 631AA
STYLE 2
A6 M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16M3T5G
SOT−723
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 4
1
Publication Order Number:
BAS16M3/D
BAS16M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
100
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
mAdc
Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
VFR
−
1.75
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
trr
−
6.0
ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 W)
QS
−
45
pC
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2
mV
BAS16M3T5G
820 W
+10 V
2.0 k
IF
100 mH
tr
0.1 mF
tp
IF
t
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
0
1.2
10
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
50
BAS16M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAS16M3/D
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