BAS16XV2T1 D

BAS16XV2
Switching Diode
Features
•
•
•
•
•
•
High−Speed Switching Applications
Lead Finish: 100% Matte Sn (Tin)
Qualified Reflow Temperature: 260°C
Extremely Small SOD−523 Package
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
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1
CATHODE
Value
Unit
Continuous Reverse Voltage
VR
100
V
Continuous Forward Current
IF
200
mA
Peak Forward Surge Current
IFM(surge)
500
mA
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
500
mA
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t=1s
IFSM
SOD−523
CASE 502
1
Junction and Storage Temperature
2
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
4.0
1.0
0.5
Device
Package
Shipping†
BAS16XV2T1G
SOD−523
(Pb−Free)
3000 / Tape & Reel
BAS16XV2T5G
SOD−523
(Pb−Free)
8000 / Tape & Reel
SBAS16XV2T1G
SOD−523
(Pb−Free)
3000 /T ape & Reel
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
A6 MG
G
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
MARKING
DIAGRAM
2
1
Symbol
Characteristic
2
ANODE
Symbol
Max
Unit
PD
200
mW
1.57
mW/°C
RθJA
635
°C/W
TJ, Tstg
−55 to 150
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR-5 Minimum Pad.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 8
1
Publication Order Number:
BAS16XV2T1/D
BAS16XV2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
−
1.0
50
30
100
−
−
−
−
−
715
855
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
mA
IR
Reverse Breakdown Voltage
(IBR = 100 mA)
V(BR)
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
2.0
pF
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
VFR
−
1.75
V
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω)
trr
−
6.0
ns
Stored Charge
(IF = 10mA to VR = 5.0V, RL = 500 Ω)
QS
−
45
pC
820 Ω
+10 V
2.0 k
100 μH
tr
0.1 μF
IF
tp
t
IF
trr
10%
t
0.1 μF
90%
D.U.T.
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS16XV2
10
100
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8
50
BAS16XV2
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
2X
b
0.08
1
M
2
X Y
DIM
A
b
c
D
E
HE
L
L2
TOP VIEW
A
c
HE
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
2X
2X
L
1.80
0.48
2X
0.40
2X
PACKAGE
OUTLINE
L2
BOTTOM VIEW
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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4
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BAS16XV2T1/D
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