BAS19LT1 D

BAS19L, BAS20L, BAS21L,
BAS21DW5
High Voltage
Switching Diode
Features
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
HIGH VOLTAGE
SWITCHING DIODE
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
SOT−23
3
CATHODE
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
Value
Unit
VR
Vdc
SC−88A
5
1
CATHODE
ANODE
120
200
250
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
VRRM
Vdc
4
CATHODE
3
120
200
250
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
TJ, Tstg
−55 to +150
°C
PD
385
mW
ESD
HM < 500
V
MM < 400
V
Power Dissipation (Note 1)
Electrostatic Discharge
3
ANODE
MARKING DIAGRAMS
Continuous Forward Current
Junction and Storage Temperature
Range
1
ANODE
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
3
Jx M G
G
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
2
1
5
Jx M G
G
3
1
SC−88A (SOT−353)
CASE 419A
4
1
2
3
x
= P, R, or S
P
= BAS19L
R
= BAS20L
S
= BAS21L or BAS21DW5
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 16
1
Publication Order Number:
BAS19LT1/D
BAS19L, BAS20L, BAS21L, BAS21DW5
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Total Device Dissipation FR−5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
−55 to +150
°C
Symbol
Max
Unit
PD
385
mW
328
3.0
°C/W
mW/°C
TJmax
150
°C
TJ, Tstg
−55 to +150
°C
RJA
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance Junction−to−Ambient
RJA
Junction and Storage
Temperature Range
TJ, Tstg
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
RJA
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR−5 = 1.0
0.75
0.062 in.
3. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Breakdown Voltage
(IBR = 100 Adc)
(IBR = 100 Adc)
(IBR = 100 Adc)
BAS19
BAS20
BAS21
Min
Max
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
120
200
250
−
−
−
−
−
1.0
1.25
Unit
Adc
IR
V(BR)
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
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2
Vdc
BAS19L, BAS20L, BAS21L, BAS21DW5
820 +10 V
2.0 k
IF
100 H
tr
0.1 F
tp
IF
t
trr
10%
t
0.1 F
90%
D.U.T.
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
IR(REC) = 3.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10 150°C
100
IR , REVERSE CURRENT (μA)
125°C
85°C
10
55°C
25°C
1.0
-55°C
125°C
1.0
85°C
0.1
55°C
0.01
25°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.9
0.001
20
1.0
50
80
200
170
110
140
VR, REVERSE VOLTAGE (V)
Figure 2. VF vs. IF
Figure 3. IR vs. VR
1.6
Cap
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
230
260
BAS19L, BAS20L, BAS21L, BAS21DW5
ORDERING INFORMATION
Package
Shipping†
BAS19LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS19LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
NSVBAS19LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS20LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS20LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
NSVBAS20LT3G*
SOT−23
(Pb−Free)
10000 / Tape & Reel
SBAS20LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBAS21LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
BAS21LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
SBAS21LT3G*
SOT−23
(Pb−Free)
10000 / Tape & Reel
BAS21DW5T1G
SC−88A
(Pb−Free)
3000 / Tape & Reel
SBAS21DW5T1G*
SC−88A
(Pb−Free)
3000 / Tape & Reel
SBAS21DW5T3G*
SC−88A
(Pb−Free)
10000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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4
BAS19L, BAS20L, BAS21L, BAS21DW5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
BAS19L, BAS20L, BAS21L, BAS21DW5
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE K
A
G
5
4
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
B
M
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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LITERATURE FULFILLMENT:
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6
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
BAS19LT1/D
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