BAS21HT1 D

BAS21HT1G,
NSVBAS21HT1G,
NSVBAS21HT3G
High Voltage
Switching Diode
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Features
• NSV Prefix for Automotive and Other Applications Requiring
•
HIGH VOLTAGE
SWITCHING DIODE
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Surge
Current, 60 Hz
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
Symbol
Value
Unit
VR
250
Vdc
VRRM
250
Vdc
IF
200
mAdc
IFRM
500
mA
IFSM(surge)
625
mAdc
IFSM
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200
mW
1.57
mW/°C
RqJA
635
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
June, 2013 − Rev. 10
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
© Semiconductor Components Industries, LLC, 2013
JS M G
G
*Date Code orientation may vary depending upon manufacturing location.
Characteristic
Junction and Storage Temperature
Range
MARKING
DIAGRAM
SOD−323
CASE 477
STYLE 1
1
JS
M
G
20
20
10
4
1
2
ANODE
2
A
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
1
CATHODE
1
ORDERING INFORMATION
Package
Shipping†
BAS21HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
NSVBAS21HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
NSVBAS21HT3G
SOD−323
(Pb−Free)
10000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAS21HT1/D
BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−
−
0.1
100
250
−
−
−
1000
1250
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
mAdc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
−
50
ns
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G
TA = −55°C
1000
25°C
800
REVERSE CURRENT (nA)
FORWARD VOLTAGE (mV)
1200
155°C
600
400
200
1
1
10
100
7000
6000
5000
4000
3000
4
3
2
TA = 25°C
TA = −55°C
1
2
5
10
20
50
100
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
200 300
25
1.0
0.9
Based on square wave currents
TJ = 25°C prior to surge
20
0.8
0.7
IFSM (A)
Cd, DIODE CAPACITANCE (pF)
6
5
1
0
1000
TA = 155°C
0.6
15
10
0.5
5
0.4
0.3
0
1
2
3
4
5
6
7
0
8
0.001
0.01
0.1
1
VR, REVERSE VOLTAGE (V)
Tp (mSec)
Figure 4. Diode Capacitance
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
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3
10
BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
HE
D
b
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAS21HT1/D
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