BAS21M3 D

BAS21M3T5G
High Voltage Switching
Diode
The BAS21M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high voltage switching
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
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250 V
HIGH VOLTAGE
SWITCHING DIODE
Features
• Reduces Board Space
• This is a Halide−Free Device
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
3
CATHODE
1
ANODE
MARKING
DIAGRAM
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
250
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
625
mAdc
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RJA
470
°C/W
PD
640
mW
5.1
mW/°C
RJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
265
2.1
3
1
2
SOT−723
CASE 631AA
STYLE 2
AM M
1
AM = Specific Device Code
M = Date Code
mW
mW/°C
ORDERING INFORMATION
Package
Shipping†
BAS21M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
NSVBAS21M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
BAS21M3/D
BAS21M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Min
IR
V(BR)
Reverse Breakdown Voltage (IBR = 100 Adc)
Max
−
−
0.1
100
250
−
−
−
1.0
1.25
Unit
Adc
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)
CD
−
5.0
pF
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
trr
−
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 +10 V
2.0 k
100 H
tr
0.1 F
IF
tp
t
IF
trr
10%
t
0.1 F
90%
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IR(REC) = 3.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS21M3T5G
TYPICAL CHARACTERISTICS
10 150°C
100
IR , REVERSE CURRENT (μA)
125°C
85°C
10
55°C
25°C
1.0
-55°C
125°C
1.0
85°C
0.1
55°C
0.01
25°C
-40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (V)
0.8
0.9
0.001
20
1.0
50
80
170
200
110
140
VR, REVERSE VOLTAGE (V)
Figure 2. VF vs. IF
Figure 3. IR vs. VR
1.6
Cap
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
150°C
1.4
1.2
1.0
0.8
0.6
0.4
0
1
2
3
4
5
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
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3
6
7
8
230
260
BAS21M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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4
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS21M3/D
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