BAS21M3T5G High Voltage Switching Diode The BAS21M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for high voltage switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com 250 V HIGH VOLTAGE SWITCHING DIODE Features • Reduces Board Space • This is a Halide−Free Device • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 250 Vdc Forward Current IF 200 mAdc IFM(surge) 625 mAdc Peak Forward Surge Current THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RJA 470 °C/W PD 640 mW 5.1 mW/°C RJA 195 °C/W TJ, Tstg −55 to +150 °C Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 265 2.1 3 1 2 SOT−723 CASE 631AA STYLE 2 AM M 1 AM = Specific Device Code M = Date Code mW mW/°C ORDERING INFORMATION Package Shipping† BAS21M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSVBAS21M3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 1 1 Publication Order Number: BAS21M3/D BAS21M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Min IR V(BR) Reverse Breakdown Voltage (IBR = 100 Adc) Max − − 0.1 100 250 − − − 1.0 1.25 Unit Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS21M3T5G TYPICAL CHARACTERISTICS 10 150°C 100 IR , REVERSE CURRENT (μA) 125°C 85°C 10 55°C 25°C 1.0 -55°C 125°C 1.0 85°C 0.1 55°C 0.01 25°C -40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 0.001 20 1.0 50 80 170 200 110 140 VR, REVERSE VOLTAGE (V) Figure 2. VF vs. IF Figure 3. IR vs. VR 1.6 Cap CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 150°C 1.4 1.2 1.0 0.8 0.6 0.4 0 1 2 3 4 5 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance http://onsemi.com 3 6 7 8 230 260 BAS21M3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L L2 MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE RECOMMENDED SOLDERING FOOTPRINT* BOTTOM VIEW 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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