BAV70TT1 D

BAV70T, NSVBAV70T
Dual Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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ANODE
1
3
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
MARKING
DIAGRAM
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction to Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
2
Symbol
Max
Unit
225
mW
1.8
mW/°C
555
°C/W
April, 2015 − Rev. 6
1
CASE 463
SOT−416/SC−75
STYLE 3
A4 MG
G
1
PD
RJA
A4
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ORDERING INFORMATION
PD
360
mW
2.9
mW/°C
RJA
345
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
© Semiconductor Components Industries, LLC, 2015
2
ANODE
1
Device
Package
Shipping†
BAV70TT1G
SOT−416
(Pb-Free)
3000 / Tape &
Reel
NSVBAV70TT1G
SOT−416
(Pb-Free)
3000 / Tape &
Reel
NSVBAV70TT3G
SOT−416
(Pb-Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BAV70TT1/D
BAV70T, NSVBAV70T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
100
−
Vdc
IR
IR
−
−
1.0
100
Adc
nAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
−
1.5
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1)
trr
−
6.0
ns
VRF
−
1.75
V
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 Adc)
Reverse Voltage Leakage Current (Note 3)
(VR = 100 Vdc)
(VR = 50 Vdc)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
3. For each individual diode while the second diode is unbiased.
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2
mVdc
BAV70T, NSVBAV70T
BAV70
RS = 50 SAMPLING
OSCILLOSCOPE
RL = 50 IF
tr
tp
I
10%
+IF
trr
10%OF
90%
VR
OUTPUT PULSE
INPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
450 1 K
RS = 50 SAMPLING
OSCILLOSCOPE
RL = 50 BAV70
I
V
90%
VFR
10%
t
tr
tp
INPUT PULSE
Figure 2.
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3
OUTPUT PULSE
t
VR
100
BAV70T, NSVBAV70T
10
100
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
TA = 150°C
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 3. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 4. Leakage Current
CD, DIODE CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 5. Capacitance
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 6. Normalized Thermal Response
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4
10
100
1000
BAV70T, NSVBAV70T
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
0.20 (0.008) E
HE
C
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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5
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For additional information, please contact your local
Sales Representative
BAV70TT1/D
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