DAN222 D

DAN222, NSVDAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−416/SC−75 package which is designed
for low power surface mount applications, where board space is at a
premium.
http://onsemi.com
CATHODE
3
Features
• Fast trr
• Low CD
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
ANODE
1
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current (Note 1)
IFSM
2.0
Adc
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C/W
Storage Temperature Range
Tstg
−55 to +150
°C
Reverse Voltage
Peak Reverse Voltage
Forward Current
SC−75/SOT−416
CASE 463
STYLE 3
MARKING DIAGRAM
N9 M G
G
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
1
N9
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
DAN222G
SC−75
(Pb−Free)
3000 / Tape & Reel
DAN222T1G
SC−75
(Pb−Free)
3000 / Tape & Reel
NSVDAN222T1G
SC−75
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
Publication Order Number:
DAN222/D
DAN222, NSVDAN222
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
−
0.1
mAdc
Forward Voltage
VF
IF = 100 mA
−
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100 mA
80
−
Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
trr (Note 2)
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
−
4.0
ns
Reverse Recovery Time
2. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = -40°C
1.0
TA = 25°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.0
CD , DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.9
0.8
0.7
0.6
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
http://onsemi.com
2
8
50
DAN222, NSVDAN222
tr
tp
trr
IF
t
t
10%
A
RL
Irr = 0.1 IR
90%
VR
tp = 2 ms
tr = 0.35 ns
INPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the DAN222
http://onsemi.com
3
IF = 5.0 mA
VR = 6 V
RL = 100 W
OUTPUT PULSE
DAN222, NSVDAN222
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
−E−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
HE
C
0.20 (0.008) E
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
DAN222/D
Similar pages