MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOD−323 CASE 477 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA IFSM(surge) 500 mA Repetitive Peak Forward Current (Note 2) IFRM 1.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s IFSM Non−Repetitive Peak Forward Surge Current 60 Hz = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Max Unit Total Device Dissipation FR-5 Board TA = 25°C (Note 1) Derate above 25°C PD 200 mW 1.57 mW/°C RqJA TJ, Tstg °C/W 635 −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 Minimum Pad. 2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge. July, 2013 − Rev. 9 5D M G G (Note: Microdot may be in either location) Symbol © Semiconductor Components Industries, LLC, 2013 MARKING DIAGRAM 5D M G 36.0 18.0 6.0 3.0 0.7 Characteristic Junction and Storage Temperature 2 ANODE A THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient 1 CATHODE 1 Package Shipping† MMDL914T1G SOD−323 (Pb−Free) 3,000 / Tape & Reel SMMDL914T1G SOD−323 (Pb−Free) 3,000 / Tape & Reel MMDL914T3G SOD−323 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMDL914T1/D MMDL914T1G, SMMDL914T1G, MMDL914T3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 100 − − − 25 5.0 − 4.0 − 1.0 − 4.0 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) V(BR) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CT Forward Voltage (IF = 10 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr Vdc nAdc mAdc pF Vdc ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMDL914T1G, SMMDL914T1G, MMDL914T3G 10 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) TA = 150°C TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 0 1.2 Figure 2. Forward Voltage 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 3. Leakage Current 40 0.68 Based on square wave currents TJ = 25°C prior to surge 35 30 0.64 IFSM (A) CD, DIODE CAPACITANCE (pF) 50 0.60 25 20 15 10 0.56 5 0.52 0 2 4 6 0 0.0001 8 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) Tp (mSec) Figure 4. Capacitance Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values http://onsemi.com 3 10 MMDL914T1G, SMMDL914T1G, MMDL914T3G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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