NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. www.onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* Features • • • • • • • • • • Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection NCV8402AMNWT1G − Wettable Flanks Product dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant *Max current limit value is dependent on input condition. MARKING DIAGRAMS DRAIN 4 4 1 2 SOT−223 CASE 318E STYLE 3 3 AYW xxxxx G G 1 2 3 SOURCE GATE DRAIN 1 xxxxx AYWW G 1 xxxxx AYWW G DFN6 CASE 506AX 1 Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial DFN6 (WF) CASE 506AH 1 A = Assembly Location Y = Year W or WW = Work Week xxxxx = V8402 or 8402A G = Pb−Free Package Drain Overvoltage Protection Gate Input (Note: Microdot may be in either location) ESD Protection Temperature Limit DFN6 PACKAGE PIN DESCRIPTION Current Limit G NC NC 1 2 3 Current Sense 7 EPAD Source 6 S 5 S 4 S Pin # Symbol Description 1 2 3 4 5 6 7 G NC NC S* S* S* EPAD Gate Input No Connect No Connect Source Source Source Drain *Pins 4, 5, 6 are internally shorted together. It is recommended to short these pins externally. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 18 1 ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. Publication Order Number: NCV8402/D NCV8402, NCV8402A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Symbol Value Unit VDSS 42 V VDGR 42 V VGS "14 V ID Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 1) Thermal Resistance Internally Limited PD 1.1 1.7 8.9 W SOT223 Junction−to−Ambient Steady State (Note 1) SOT223 Junction−to−Ambient Steady State (Note 2) SOT223 Junction−to−Tab Steady State (Note 1) RqJA RqJA RqJT 114 72 14 °C/W DFN Junction−to−Ambient Steady State (Note 1) DFN Junction−to−Ambient Steady State (Note 2) DFN Junction−to−Pad Steady State (Note 1) RqJA RqJA RqJP 163 70 14 EAS 150 Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) mJ VLD 55 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Load Dump Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V 40 45 55 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°C IDSS 0.25 4.0 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) IDSS 1.1 20 mA VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA VGS = VDS, ID = 150 mA VGS(th) 1.8 2.2 V Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25°C Static Drain−to−Source On−Resistance 1.3 VGS(th)/TJ 4.0 RDS(on) −mV/°C 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150°C (Note 5) 305 400 VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150°C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 350 460 Source−Drain Forward On Voltage mW VGS = 0 V, IS = 7.0 A VSD 1.0 V VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W tON 25 ms SWITCHING CHARACTERISTICS (Note 5) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (70% VDS to 50% VDS) VGS = 10 V, VDD = 12 V, RL = 4.7 W Slew−Rate OFF (50% VDS to 70% VDS) tOFF 120 −dVDS/dtON 0.8 dVDS/dtOFF 0.3 V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C ILIM 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 2.7 3.6 4.5 150 175 200 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) VGS = 5 V ID = 1.0 A IGON A °C 15 150 165 185 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 50 mA 400 0.05 mA 0.4 IGTL 0.15 0.7 mA NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 V 400 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25°C 100 TJstart = 25°C TJstart = 150°C TJstart = 150°C 1 10 10 10 100 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 0.1 TJstart = 25°C 100 TJstart = 150°C 10 1 10 TIME IN CLAMP (ms) 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 5 8 8V TA = 25°C 7 10 V VDS = 10 V 6V −40°C 25°C 4 6 100°C 5V 4V 3 ID (A) ID (A) 5 3.5 V 4 3 2 3V 1 VGS = 2.5 V 0 10 TIME IN CLAMP (ms) 150°C 2 1 0 0 1 2 3 4 5 VDS (V) 1 3 VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 5 2 4 5 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 350 400 150°C, VGS = 5 V 150°C, ID = 0.5 A 300 RDS(on) (mW) 200 RDS(on) (mW) 150°C, ID = 1.7 A 300 100°C, ID = 1.7 A 100°C, ID = 0.5 A 25°C, ID = 1.7 A 25°C, ID = 0.5 A 150°C, VGS = 10 V 250 100°C, VGS = 5 V 100°C, VGS = 10 V 200 25°C, VGS = 5 V 150 25°C, VGS = 10 V 100 −40°C, ID = 0.5 A −40°C, ID = 1.7 A 0 4 5 −40°C, VGS = 5 V 100 −40°C, VGS = 10 V 6 7 8 9 50 0.2 10 VGS (V) 0.4 0.6 1 1.2 ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 1.4 1.6 1.8 2 8 2 ID = 1.7 A −40°C 7 1.75 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMIALZIZED) 0.8 1.25 1 25°C 5 100°C 4 VGS = 10 V 150°C 3 0.75 VDS = 10 V 0.5 −40 2 −20 0 20 40 60 T (°C) 80 100 120 140 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150°C 1 5 0.1 100°C 0.01 4 25°C VGS = 5 V −40°C 0.001 3 VDS = 10 V 2 −40 −20 0 20 40 60 80 100 120 0.0001 10 140 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 6 40 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 −40°C 0.9 25°C 0.8 100°C 0.7 0.8 150°C 0.7 0.6 0.6 −40 0.5 VGS = 0 V −20 0 20 40 60 80 100 120 1 140 5 6 7 8 9 Figure 15. Source−Drain Diode Forward Characteristics 10 1 ID = 2.5 A VDD = 12 V RG = 0 W 100 td(off) tf 50 tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 4 Figure 14. Normalized Threshold Voltage vs. Temperature 150 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 −dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 td(off), (VGS = 10 V) 75 tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN−SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 3 IS (A) 200 0 2 T (°C) −dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V ID = 2.5 A VDD = 12 V 0 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) 1500 2000 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 7 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance − SOT−223 Package 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE WIDTH (sec) Figure 21. Transient Thermal Resistance − DFN Package www.onsemi.com 8 10 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN VDS tOFF tON 90% 10% 90% 10% IDS Figure 23. Resistive Load Switching Waveforms www.onsemi.com 9 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms www.onsemi.com 10 NCV8402, NCV8402A Table 1. ORDERING INFORMATION Package Shipping† SOT−223 (Pb−Free) 1000 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel DFN6 (Pb−Free) 3000 / Tape & Reel DFN6 (Pb−Free, Wettable Flank) 3000 / Tape & Reel Device NCV8402STT1G NCV8402ASTT1G NCV8402STT3G NCV8402ASTT3G NCV8402AMNT2G NCV8402AMNWT1G (In Development) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A q L MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 www.onsemi.com 11 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − STYLE 3: PIN 1. 2. 3. 4. L1 2.3 0.091 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − mm Ǔ ǒinches MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° GATE DRAIN SOURCE DRAIN NCV8402, NCV8402A PACKAGE DIMENSIONS DFN6 3x3, 0.95 PITCH CASE 506AH ISSUE O NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A D B PIN 1 REFERENCE 2X 0.15 C 2X ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C E DIM A A1 A3 b D D2 E E2 e K L TOP VIEW 0.10 C A 6X 0.08 C SEATING PLANE (A3) SIDE VIEW SOLDERING FOOTPRINT* C A1 0.450 0.0177 D2 6X L e 1 3 1.700 0.685 3.31 0.130 K 6 0.950 0.0374 4X E2 6X MILLIMETERS MIN NOM MAX 0.80 0.90 1.00 0.00 0.03 0.05 0.20 REF 0.35 0.40 0.45 3.00 BSC 2.40 2.50 2.60 3.00 BSC 1.50 1.60 1.70 0.95 BSC 0.21 −−− −−− 0.30 0.40 0.50 4 6X b (NOTE 3) 0.10 C A B BOTTOM VIEW 0.05 C 0.63 0.025 2.60 0.1023 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 NCV8402, NCV8402A PACKAGE DIMENSIONS DFN6 3x3.3, 0.95 PITCH CASE 506AX ISSUE O A D NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. B ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ PIN 1 REFERENCE 2X E DIM A A1 A3 b D D2 E E2 e K L L1 0.15 C 2X 0.15 C TOP VIEW 0.10 C A 6X 0.08 C SEATING PLANE (A3) SIDE VIEW SOLDERING FOOTPRINT* C A1 3.60 D2 4X 6X 1.35 e L 1 L1 6 6X 0.50 1 K 3 E2 6X MILLIMETERS MIN NOM MAX 0.80 −−− 0.90 0.00 −−− 0.05 0.20 REF 0.30 −−− 0.40 3.00 BSC 1.90 −−− 2.10 3.30 BSC 1.10 −−− 1.30 0.95 BSC 0.20 −−− −−− 0.40 −−− 0.60 0.00 −−− 0.15 2.15 0.95 PITCH 4 6X BOTTOM VIEW b 6X (NOTE 3) 0.83 DIMENSIONS: MILLIMETERS 0.10 C A B *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.05 C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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