D44H D

D44H Series (NPN),
D45HSeries (PNP)
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
•
•
•
•
Low Collector−Emitter Saturation Voltage
Fast Switching Speeds
Complementary Pairs Simplifies Designs
These Devices are Pb−Free and are RoHS Compliant*
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10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
Emitter Base Voltage
Symbol
Value
VCEO
Vdc
Vdc
IC
10
Adc
Collector Current − Peak (Note 1)
ICM
20
Adc
Total Power Dissipation
@ TC = 25°C
@ TA = 25°C
PD
°C
−55 to +150
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.8
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
275
°C
1
TO−220
CASE 221A
STYLE 1
2
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
D4xHyyG
AYWW
3
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
November, 2014 − Rev. 13
MARKING
DIAGRAM
4
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2014
EMITTER 3
W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.
Characteristic
1
BASE
70
2.0
TJ, Tstg
COLLECTOR 2, 4
EMITTER 3
60
80
5.0
Operating and Storage Junction
Temperature Range
1
BASE
Unit
VEB
Collector Current − Continuous
NPN
PNP
Package
Shipping
D44H8G
TO−220
(Pb−Free)
50 Units/Rail
D44H11G
TO−220
(Pb−Free)
50 Units/Rail
D45H8G
TO−220
(Pb−Free)
50 Units/Rail
D45H11G
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
D44H/D
D44H Series (NPN), D45H Series (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
60
80
−
−
−
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
ICES
−
−
10
mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
−
−
10
mA
60
40
−
−
−
−
−
−
1.0
−
−
1.5
−
−
90
160
−
−
−
−
50
40
−
−
−
−
300
135
−
−
−
−
500
500
−
−
−
−
140
100
−
−
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8
D44H11, D45H11
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 2.0 Adc)
(VCE = 1.0 Vdc, IC = 4.0 Adc)
hFE
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.4 Adc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 0.8 Adc)
VBE(sat)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1.0 MHz)
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
Ccb
D44H Series
D45H Series
pF
fT
D44H Series
D45H Series
MHz
SWITCHING TIMES
Delay and Rise Times
(IC = 5.0 Adc, IB1 = 0.5 Adc)
Storage Time
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
Fall Time
(IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
td + tr
D44H Series
D45H Series
ns
ts
D44H Series
D45H Series
ns
tf
D44H Series
D45H Series
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
D44H Series (NPN), D45H Series (PNP)
1000
1000
VCE = 1 V
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
125°C
−40°C
100
125°C
25°C
100
−40°C
10
10
0.01
0.1
1
0.01
10
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000
VCE = 5 V
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1
IC, COLLECTOR CURRENT (AMPS)
1000
25°C
125°C
−40°C
100
10
125°C
25°C
100
−40°C
10
0.01
0.1
1
0.01
10
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain
Figure 4. D45H11 DC Current Gain
0.6
0.40
VCE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
0.1
0.35
0.30
−40°C
0.25
0.20
25°C
0.15
125°C
0.10
0.05
VCE(sat) @ IC/IB = 10
0.5
0.4
−40°C
0.3
25°C
125°C
0.2
0.1
0
0
0.1
1
0.1
10
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. D44H11 ON−Voltage
Figure 6. D45H11 ON−Voltage
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3
10
D44H Series (NPN), D45H Series (PNP)
1.4
VBE(sat) @ IC/IB = 10
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1.2
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
−40°C
1.0
0.8
125°C
0.6
25°C
0.4
0.2
0
0.1
1
10
0.1
Figure 7. D44H11 ON−Voltage
Figure 8. D45H11 ON−Voltage
PD, POWER DISSIPATION (WATTS)
1.0 ms
100 ms
10
10 ms
TC ≤ 70° C
dc
DUTY CYCLE ≤ 50%
1.0
1.0 ms
0.5
0.3
0.2
D44H/45H8
D44H/45H10,11
TA TC
3.0 60
2.0 40
TC
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
TA
1.0 20
0
0.1
1.0
0
0
20
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 9. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.7
0.5
60
100
120
80
T, TEMPERATURE (°C)
140
160
Figure 10. Power Derating
0.2
0.2
0.1
0.1
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
40
D = 0.5
0.3
0.07
0.05
10
IC, COLLECTOR CURRENT (AMPS)
50
30
20
5.0
3.0
2.0
1
IC, COLLECTOR CURRENT (AMPS)
100
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 10
1.2
0.01
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 11. Thermal Response
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4
20
50
100
200
500 1.0 k
D44H Series (NPN), D45H Series (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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D44H/D
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