NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Fast Switching Speeds • High Frequency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 80 VOLT, 10 AMPS NPN POWER TRANSISTORS Compliant NPN COLLECTOR 2, 4 Benefits • • • • • Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth 1 BASE EMITTER 3 Applications • High−end Consumer Audio Products ♦ ♦ MARKING DIAGRAM 4 Home Amplifiers Home Receivers NJWxxxG AYWW MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC 10 A Collector Current − Peak (Note 1) ICM 20 A Total Power Dissipation @ TC = 25°C PD 120 Watts Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC 1.04 °C/W TJ, Tstg − 65 to +150 °C Collector Current − Continuous THERMAL CHARACTERISTICS Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. TO−3P PLASTIC CASE 340AB 1 2 3 xxx G A Y WW 1 2 3 = TBD = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device NJW44H11G Package Shipping TO−3P (Pb−Free) 30 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 0 1 Publication Order Number: NJW44H11/D NJW44H11G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) VCEO 80 − − Vdc Collector−Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO − − 10 mAdc 100 80 − − 400 320 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (IC = 2 A, VCE = 2 V) (IC = 4 A, VCE = 2 V) − Collector−Emitter Saturation Voltage (IC = 8 A, IB = 400 mA) VCE(sat) − − 1.0 V Base−Emitter Turn−on Voltage (IC = 8 A, VCE = 2.0 V) VBE(on) − − 1.5 V Cobo − 65 − pF fT − 85 − MHz td + tr − 300 − ns Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A) ts − 500 − ns Fall Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 A) tf − 140 − ns DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cutoff Frequency (IC = 500 mA, VCE = 5 V, f = 1.0 MHz) SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 A) http://onsemi.com 2 NJW44H11G TYPICAL CHARACTERISTICS 500 500 450 150°C 400 350 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 450 25°C 300 250 200 −55°C 150 100 50 0 0.01 0.1 1 10 250 −55°C 200 150 100 VCE = 4 V 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. DC Current Gain VCE(sat) @ IC/IB = 10 COLLECTOR−EMITTER SATURATION VOLTAGE (V) COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C 0.30 0.25 25°C 0.20 0.15 0.10 −55°C 0.05 0.01 0.1 1 VCE(sat) @ IC/IB = 20 0.35 150°C 0.30 0.25 25°C 0.20 0.15 0.10 −55°C 0.05 0 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage Figure 4. Collector Emitter Saturation Voltage 1.2 1.2 1.0 BASE−EMITTER VOLTAGE (V) BASE−EMITTER SATURATION VOLTAGE (V) 25°C 300 0.40 0.35 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 350 IC, COLLECTOR CURRENT (A) 0.40 0 400 50 0 VCE = 2 V 150°C VBE(sat) @ IC/IB = 10 0.01 0.1 1 1.0 25°C 0.6 150°C 0.4 0.2 0 10 −55°C 0.8 VBE(on) @ VCE = 4 V 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage Figure 6. Base Emitter “ON” Voltage http://onsemi.com 3 10 NJW44H11G TYPICAL CHARACTERISTICS 90 80 TJ = 25°C f = 1 MHz 200 fT, CURRENT BANDWIDTH PRODUCT (MHz) Cob, OUTPUT CAPACITANCE (pF) 250 150 100 50 60 50 40 VCE = 5 V ftest = 1 MHz TJ = 25°C 30 20 10 0 0 10 20 30 40 50 60 70 0 80 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 7. Output Capacitance Figure 8. Current Gain Bandwidth Product 100 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0.01 VCB, COLLECTOR−BASE VOLTAGE 140 PD, POWER DISSIPATION (W) 70 0 20 40 60 80 100 120 140 10 1 mS 10 mS 1 0.1 0.01 160 1 Sec 1 10 T, TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Power Temperature Derating Figure 10. Safe Operating Area (SOA) http://onsemi.com 4 100 NJW44H11G PACKAGE DIMENSIONS TO−3P−3LD CASE 340AB−01 ISSUE A B A B C Q 4 SEATING PLANE U E A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. L DIM A B C D E F G H J K L P Q U W (3°) P K 1 2 3 3X D 0.25 G M A B S H J F W G STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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