2N6040 D

PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
•
•
•
•
•
VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol
Value
Unit
2N6040
2N6043
2N6042
2N6045
VCEO
60
Vdc
2N6040
2N6043
2N6042
2N6045
VCB
Emitter−Base Voltage
60
100
MARKING DIAGRAM
2N604xG
AYWW
Vdc
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
0.60
W
W/°C
TJ, Tstg
–65 to +150
°C
Operating and Storage Junction
Temperature Range
TO−220
CASE 221A
STYLE 1
Vdc
5.0
Continuous
Peak
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
100
VEB
Collector Current
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Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1
Publication Order Number:
2N6040/D
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
qJC
1.67
°C/W
Thermal Resistance, Junction−to−Ambient
qJA
57
°C/W
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
60
100
−
−
−
20
20
−
−
−
−
−
20
20
200
200
200
−
−
20
20
−
2.0
1000
1000
100
20.000
20,000
−
−
−
−
2.0
2.0
4.0
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N6040, 2N6043
2N6042, 2N6045
Vdc
−
mA
ICEO
mA
ICEX
mA
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
2N6040, 2N6043,
2N6042, 2N6045
All Types
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 80 Adc)
2N6040, 2N6043,
2N6042, 2N6045
All Types
−
VCE(sat)
Vdc
Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
−
4.5
Vdc
Base−Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
2.8
Vdc
|hfe|
4.0
−
Cob
−
−
300
200
pF
hfe
300
−
−
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6040/2N6042
2N6043/2N6045
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
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2
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
5.0
RC
SCOPE
TUT
V2
approx
+8.0 V
RB
51
0
V1
approx
-12 V
D1
≈ 8.0 k ≈120
+4.0 V
25 ms
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
ts
2.0
t, TIME (s)
μ
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
VCC
-30 V
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
PNP
0.07
td @ VBE(off) = 0 V
NPN
0.05
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Times Equivalent Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.02
0.05
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.01
0.05
5.0 7.0
10
P(pk)
qJC(t) = r(t) qJC
qJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.03
tr
Figure 3. Switching Times
0.2
0.1
0.07
0.05
tf
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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3
20
30
50
100
200 300
500
1000
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
IC, COLLECTOR CURRENT (AMP)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
500 ms
1.0ms
dc
5.0ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
2N6045
0.02
1.0
70 100
5.0 7.0 10
20 30
2.0 3.0
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
300
TJ = 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hfe, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
2.0
5.0
Cib
70
50
PNP
NPN
10
1.0
Cob
100
PNP
NPN
10
20
50 100
f, FREQUENCY (kHz)
100
30
0.1
500 1000
200
20
0.5
1.0 2.0
5.0 10
VR, REVERSE VOLTAGE (VOLTS)
0.2
Figure 7. Capacitance
Figure 6. Small−Signal Current Gain
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
20,000
20,000
1000
700
500
300
200
0.1
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
3000
2000
VCE = 4.0 V
VCE = 4.0 V
10,000
7000
5000
50
TJ = 150°C
25°C
-55°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
-55°C
300
200
0.1
10
Figure 8. DC Current Gain
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4
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
30
20
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
7.0
10
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
1.0
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0
0.5
7.010
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device
Package
Shipping
2N6040G
TO−220
(Pb−Free)
50 Units / Rail
2N6042G
TO−220
(Pb−Free)
50 Units / Rail
2N6043G
TO−220
(Pb−Free)
50 Units / Rail
2N6045G
TO−220
(Pb−Free)
50 Units / Rail
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5
5.0
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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2N6040/D
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