BDW42 D

BDW42G (NPN),
BDW46G,BDW47G (PNP)
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
•
•
•
•
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
Monolithic Construction with Built−In Base Emitter Shunt resistors
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
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15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT
4
1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Symbol
Value
VCEO
Unit
VCB
Emitter-Base Voltage
TO−220
CASE 221A
STYLE 1
Vdc
MARKING DIAGRAM
80
100
VEB
5.0
Vdc
Collector Current
IC
15
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
85
0.68
W
W/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
RqJC
1.47
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
3
Vdc
80
100
Collector-Base Voltage
BDW46
BDW42, BDW47
2
BDWxx
AYWWG
BDWxx = Device Code
x = 42, 46, or 47
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BDW42G
TO−220
(Pb−Free)
50 Units/Rail
BDW46G
TO−220
(Pb−Free)
50 Units/Rail
BDW47G
TO−220
(Pb−Free)
50 Units/Rail
Publication Order Number:
BDW42/D
BDW42G (NPN), BDW46G, BDW47G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
80
100
−
−
−
−
2.0
2.0
−
−
1.0
1.0
−
2.0
1000
250
−
−
−
−
2.0
3.0
−
3.0
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BDW46
BDW42/BDW47
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
BDW46
BDW42/BDW47
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDW46
BDW42/BDW47
Vdc
ICEO
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
Vdc
SECOND BREAKDOWN (Note 2)
IS/b
Second Breakdown Collector
Current with Base Forward Biased
BDW42
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
BDW46/BDW47
Adc
3.0
1.2
3.8
1.2
−
−
−
−
4.0
−
−
−
200
300
300
−
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
fT
Cob
BDW42
BDW46/BDW47
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
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2
BDW42G (NPN), BDW46G, BDW47G (PNP)
PD, POWER DISSIPATION (WATTS)
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
5.0
2.0
RC
SCOPE
APPROX
+ 8.0 V
0
51
V1
D1
[ 8.0 k
[ 150
25 ms
0.7
0.5
0.3
0.2
for td and tr, D1 id disconnected
and V2 = 0
For NPN test circuit reverse all polarities
- 12 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
tf
1.0
+ 4.0 V
APPROX
ts
3.0
t, TIME (s)
μ
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
TUT
RB
V2
VCC
- 30 V
0.1
0.07
0.05
0.1
tr
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
D = 0.5
0.3
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
Figure 2. Switching Times Test Circuit
1.0
0.7
0.5
td @ VBE(off) = 0 V
0.2
0.1
0.1
0.07
0.05
P(pk)
0.05
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
0.02
t1
0.03
0.02
0.01
0.01
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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3
20
30
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
50
100
200 300
500
1000
BDW42G (NPN), BDW46G, BDW47G (PNP)
ACTIVE−REGION SAFE OPERATING AREA
50
0.1 ms
20
10
TJ = 25°C
1.0 ms
5.0
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
2.0
1.0
0.5
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
50
0.5 ms
dc
0.2
0.1
0.05
1.0
0.1 ms
20
10
TJ = 25°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE)
2.0
1.0
0.5
BDW42
20 30
2.0 3.0
5.0 7.0 10
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. BDW46 and BDW47
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200°C; TC is variable depending on conditions.
*Linear extrapolation
10,000
300
TJ = + 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
dc
BDW46
BDW47
0.05
1.0
20 30
2.0 3.0
5.0 7.0 10
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5 ms
0.2
0.1
Figure 5. BDW42
1000
500
300
200
100
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
50
30
20
BDW46, 47 (PNP)
BDW42 (NPN)
10
1.0
1.0 ms
5.0
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
Cob
100
Cib
70
50
200
30
0.1
500 1000
Figure 7. Small−Signal Current Gain
BDW46, 47 (PNP)
BDW42 (NPN)
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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50
100
BDW42G (NPN), BDW46G, BDW47G (PNP)
BDW42 (NPN)
BDW46, 47 (PNP)
20,000
20,000
VCE = 3.0 V
VCE = 3.0 V
10,000
5000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
300
200
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7000
5000
TJ = 150°C
3000
25°C
2000
1000
700
500
-55°C
300
200
0.1
5.0 7.0 10
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
1.0
20
30
Figure 10. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
VBE(sat) @ IC/IB = 250
1.5
2.5
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
0.5
5.0 7.0 10
VCE(sat) @ IC/IB = 250
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
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5
5.0 7.0
10
BDW42G (NPN), BDW46G, BDW47G (PNP)
BDW46, 47 (PNP)
+5.0
+4.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
BDW42 (NPN)
*IC/IB v 250
+3.0
25°C to 150°C
+2.0
+1.0
-55°C to 25°C
0
-1.0
*qVC for VCE(sat)
-2.0
25°C to 150°C
-3.0
qVB for VBE
-55°C to 25°C
-4.0
-5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
+5.0
+4.0
+ 25°C to 150°C
+2.0
+1.0
0
-1.0
*qVC for VCE(sat)
-2.0
-55°C to + 25°C
qVB for VBE
+ 25°C to 150°C
-3.0
-55°C to +25°C
-4.0
-5.0
7.0 10
*IC/IB v 250
+3.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
104
105
FORWARD
REVERSE
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
103
102
101
TJ = 150°C
100°C
100
25°C
10-1
+0.6 +0.4
+0.2
0
104
103
REVERSE
FORWARD
VCE = 30 V
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 -0.4 -0.2
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
+0.2 +0.4 +0.6 +0.8
+1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
NPN
BDW42
COLLECTOR
PNP
BDW46
BDW47
BASE
COLLECTOR
BASE
[ 8.0 k
[ 60
[ 8.0 k
EMITTER
[ 60
EMITTER
Figure 14. Darlington Schematic
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BDW42G (NPN), BDW46G, BDW47G (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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BDW42/D
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