BSP52T1 D

BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
• The SOT-223 Package can be soldered using wave or reflow. The
•
•
•
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
PNP Complement is BSP62T1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCES
80
V
Collector-Base Voltage
VCBO
90
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
0.8
6.4
W
mW/°C
Total Power Dissipation (Note 2)
@ TA = 25°C
Derate above 25°C
PD
1.25
10
W
mW/°C
TJ, Tstg
−65 to 150
°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance (Note 1)
Junction-to-Ambient
Characteristic
RqJA
156
°C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
RqJA
100
°C/W
TL
260
10
°C
Sec
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
EMITTER 3
4
1
2
MARKING DIAGRAM
AYW
AS3G
G
3
SOT−223
CASE 318E
STYLE 1
A
= Assembly Location
Y
= Year
W
= Work Week
AS3
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BSP52T1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
BSP52T3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BSP52T1/D
BSP52T1G, BSP52T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
90
−
−
5.0
−
−
−
−
10
−
−
10
1000
2000
−
−
−
−
−
−
1.3
−
−
1.9
−
155
−
−
205
−
−
420
−
−
365
−
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 mA, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
Collector-Emitter Cutoff Current
(VCE = 80 V, VBE = 0)
ICES
Emitter-Base Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
V
V
mA
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
hFE
Collector-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
VBE(sat)
−
V
V
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
tr
Delay Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
td
Storage Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
ts
Fall Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
tf
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
http://onsemi.com
2
ns
ns
ns
ns
BSP52T1G, BSP52T3G
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
1000000
TJ = 150°C
100000
TJ = 25°C
10000
TJ = −55°C
1000
100
0.01
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
3.5
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 10 V
10000
2.5
2.0
1.5
0.5
0
0.01
VBE(on), BASE−EMITTER ON VOLTAGE (V)
VBE(sat), BASE−EMITTER SATURATION
VOLTAGE (V)
2.0
TJ = −55°C
1.2
TJ = 25°C
0.8
TJ = 150°C
0.1
1
10
100
1000
10000
2.0
VCE = 10 V
1.8
TJ = −55°C
1.6
1.4
TJ = 25°C
1.2
1.0
0.8
TJ = 150°C
0.6
0.4
0.2
0
0.01
0.1
1
10
100
1000
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter ON Voltage
250
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE (pF)
10
IC, COLLECTOR CURRENT (mA)
CIBO
1
0.1
1
IC, COLLECTOR CURRENT (mA)
100
10
0.1
Figure 2. Collector−Emitter Saturation Voltage
IC/IB = 1000
0
0.01
TJ = −55°C
IC, COLLECTOR CURRENT (A)
2.4
0.4
TJ = 25°C
TJ = 150°C
1.0
Figure 1. DC Current Gain
1.6
IC/IB = 1000
3.0
COBO
1
10
VCE = 2 V
230
TJ = 25°C
210
190
170
150
130
110
90
70
50
100
10000
10
100
1000
VR, REVERSE VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current Gain Bandwidth Product vs.
Collector Current
http://onsemi.com
3
BSP52T1G, BSP52T3G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
E
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BSP52T1/D
Similar pages