BU323Z D

BU323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
Features
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
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10 AMPERE DARLINGTON
AUTOPROTECTED
360 − 450 VOLTS CLAMP,
150 WATTS
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
•
•
•
•
360 V
CLAMP
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
Design Guarantees Operation in SOA at All Times
Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
Pb−Free Packages are Available*
COLLECTOR 2,4
BASE
1
MAXIMUM RATINGS
Symbol
Max
Unit
Collector−Emitter Sustaining Voltage
Rating
VCEO
350
Vdc
Collector−Emitter Voltage
VEBO
6.0
Vdc
IC
10
20
Adc
IB
3.0
6.0
Adc
PD
150
1.0
W
W/_C
TJ, Tstg
–65 to
+175
_C
Symbol
Max
Unit
RqJC
1.0
_C/W
TL
260
_C
Collector Current
− Continuous
− Peak
Base Current
− Continuous
− Peak
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature
Range
ICM
IBM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 16
1
EMITTER 3
4
SOT−93
CASE 340D
STYLE 1
1
2
3
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BU323Z/D
BU323Z
MARKING DIAGRAMS
TO−247
TO−218
BU323Z
AYWWG
1 BASE
AYWWG
BU323Z
3 EMITTER
1 BASE
2 COLLECTOR
BU323Z
A
Y
WW
G
3 EMITTER
2 COLLECTOR
=
=
=
=
=
Device Code
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device Order Number
Package Type
Shipping
BU323ZG
TO−218
(Pb−Free)
30 Units / Rail
BU323ZG
TO−247
(Pb−Free)
30 Units / Rail
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2
BU323Z
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
VCLAMP
350
−
450
Vdc
Collector−Emitter Cutoff Current
(VCE = 200 V, IB = 0)
ICEO
−
−
100
mAdc
Emitter−Base Leakage Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
−
−
50
mAdc
−
−
−
−
2.2
2.5
−
−
−
−
−
−
−
−
−
−
1.6
1.8
1.8
2.1
1.7
1.1
1.3
−
−
2.1
2.3
−
−
2.5
150
500
−
−
−
3400
fT
−
−
2.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
−
200
pF
Input Capacitance
(VEB = 6.0 V)
Cib
−
−
550
pF
WCLAMP
200
−
−
mJ
Characteristic
OFF CHARACTERISTICS (1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
(TC = − 40°C to +125°C)
ON CHARACTERISTICS (1)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
VBE(sat)
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
VCE(sat)
(TC = 125°C)
(IC = 8.0 Adc, IB = 0.1 Adc)
(TC = 125°C)
(IC = 10 Adc, IB = 0.25 Adc)
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(TC = − 40°C to +125°C)
Diode Forward Voltage Drop
(IF = 10 Adc)
VBE(on)
VF
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
(TC = − 40°C to +125°C)
hFE
Vdc
Vdc
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
CLAMPING ENERGY (see notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
Storage Time
Cross−over Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC = 14 V, VZ = 300 V)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
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3
tfi
−
625
−
ns
tsi
−
10
30
ms
tc
−
1.7
−
ms
BU323Z
IC
MERCURY CONTACTS
WETTED RELAY
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
VCE
MONITOR
(VGATE)
High Voltage Circuit turns on: IC = 20 mA
RBE = 100 W
Avalanche diode turns on: IC = 100 mA
250 V
IB CURRENT
SOURCE
300 V
340 V
Icer Leakage Current
L INDUCTANCE
(8 mH)
VBEoff
IB2 SOURCE
VCE
VCLAMP NOMINAL
= 400 V
IC
MONITOR
IC CURRENT
SOURCE
0.1 W
NON
INDUCTIVE
Figure 1. IC = f(VCE) Curve Shape
Figure 2. Basic Energy Test Circuit
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the IC = f(VCE) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 W, Vgate = 280 V, L = 8.0 mH
10
IC, COLLECTOR CURRENT (AMPS)
300ms
1
1ms
TC = 25°C
10ms
250ms
0.1
0.01
0.001
10
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
100
340V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
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4
1000
BU323Z
IC
The shaded area represents the amount of energy the
device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic diagram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
ICPEAK
IC HIGH
IC LOW
VCE
(a)
VGATE MIN
IC
ICPEAK
IC HIGH
IC LOW
VCE
(b)
VGATE MIN
IC
ICPEAK
IC HIGH
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
IC LOW
VCE
(c)
VGATE MIN
IC
ICPEAK
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
IC LOW
VCE
(d)
VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
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5
BU323Z
10000
10000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TYPICAL
TJ = 125°C
1000
-40°C
25°C
100
1000
TYP - 6Σ
TYP + 6Σ
100
VCE = 5 V, TJ = 25°C
VCE = 1.5 V
10
100
1000
IC, COLLECTOR CURRENT (MILLIAMPS)
10
100
10000
5.0
4.5
TJ = 25°C
IC = 3 A
4.0
3.5
5A
3.0
8A
10 A
2.5
2.0
7A
1.5
1.0
0.5
0
1
10
IB, BASE CURRENT (MILLIAMPS)
100
2.4
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC/IB = 150
1.8
TJ = 25°C
1.4
125°C
1.0
0.8
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
2.0
1.8
1.6
1.4
1.2
1.0
25°C
0.8
0.6
0.4
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Collector−Emitter Saturation Voltage
2.0
1.2
IC/IB = 150
2.2
Figure 7. Collector Saturation Region
1.6
100000
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. DC Current Gain
1000
10000
IC, COLLECTOR CURRENT (MILLIAMPS)
10
2.0
VCE = 2 VOLTS
1.8
1.6
1.4
TJ = 25°C
1.2
1.0
125°C
0.8
0.6
0.1
Figure 9. Base−Emitter Saturation Voltage
1
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Base−Emitter “ON” Voltages
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6
10
BU323Z
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
Q
B
U
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
S
E
1
K
2
3
J
H
D
MILLIMETERS
MIN
MAX
--20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
--16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
V
G
INCHES
MIN
MAX
--0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
--0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
BASE
COLLECTOR
EMITTER
COLLECTOR
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
T B
M
STYLE 3:
PIN 1.
2.
3.
4.
H
G
M
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
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7
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
BASE
COLLECTOR
EMITTER
COLLECTOR
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
BU323Z
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BU323Z/D
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