FSPYC260R, FSPYC260F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured. The Intersil portfolio of Star*Power FETS includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETS are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. May 2000 File Number 4850.1 Features • 58A, 200V, rDS(ON) = 0.031Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 17nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging SMD2 Reliability screening is available as either, TXV or Space equivalent of MIL-S-19500. Formerly available as type TA45211W. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Engineering samples FSPYC260D1 100K TXV FSPYC260R3 100K Space FSPYC260R4 300K TXV FSPYC260F3 300K Space FSPYC260F4 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Star*Power™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 FSPYC260R, FSPYC260F Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) FSPYC260R, FSPYC260F 200 200 UNITS V V 58 37 200 ±30 A A A V 208 83 1.67 110 58 200 -55 to 150 300 W W W/ oC A A A oC oC 3.3 (Typ) g CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) rDS(ON)12 Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = 160V, VGS = 0V VGS = ±30V MIN TYP MAX UNITS 200 - - V TC = -55oC - - 5.5 V TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC 2.0 - 4.5 V 1.0 - - V - - 25 µA - - 250 µA - - 100 nA - - 200 nA - - 1.91 V - 0.026 0.031 Ω VGS = 12V, ID = 58A ID = 37A, VGS = 12V TC = 25oC TC = 125oC VDD = 100V, ID = 58A, RL = 1.72Ω, VGS = 12V, RGS = 2.35Ω tf Total Gate Charge Qg(12) Gate Charge Source Qgs Gate Charge Drain Qgd VGS = 0V to 12V VDD = 100V, ID = 58A - - 0.062 Ω - - 35 ns - - 120 ns - - 60 ns - - 15 ns - 115 140 nC - 50 60 nC - 20 30 nC Gate Charge at 20V Qg(20) VGS = 0V to 20V - 195 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 12 - nC ID = 58A, VDS = 15V - 7.0 - V VDS = 25V, VGS = 0V, f = 1MHz - 6500 - pF pF Plateau Voltage V(PLATEAU) Input Capacitance CISS Output Capacitance COSS - 1000 - Reverse Transfer Capacitance CRSS - 30 - pF Thermal Resistance Junction to Case RθJC - - 0.6 oC/W 2 FSPYC260R, FSPYC260F Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge MIN TYP MAX UNITS ISD = 58A TEST CONDITIONS - - 1.2 V ISD = 58A, dISD/dt = 100A/µs - - 375 QRR ns µC 4.6 TC = 25oC, Unless Otherwise Specified Electrical Specifications up to 300K RAD MIN PARAMETER SYMBOL TEST CONDITIONS MAX MIN 100K RAD MAX 300K RAD Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 200 - 200 Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 2.0 4.5 1.5 UNITS V 4.5 V Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±30V, VDS = 0V - 100 100 nA Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 160V - 25 50 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 58A - 1.91 2.26 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 37A - 0.031 0.035 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) APPLIED VGS BIAS (V) TYPICAL RANGE (µ) (NOTE 6) MAXIMUM VDS BIAS (V) Br 37 36 -10 200 Br 37 36 -15 160 I 60 32 -2 200 I 60 32 -8 160 Au 82 28 0 160 Au 82 28 -5 120 NOTES: 4. Testing conducted at Brookhaven National Labs. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Performance Curves Unless Otherwise Specified LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 32µ LET = 82MeV/mg/cm2, RANGE = 28µ LET = 37 BROMINE FLUENCE = 1E5 IONS/cm2 (TYPICAL) 240 200 TEMP = 25oC 200 160 VDS (V) VDS (V) 240 160 120 120 LET = 82 GOLD 80 80 LET = 60 IODINE 40 40 0 0 0 -4 -8 -12 -16 -20 VGS (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 3 0 -5 -10 -15 -20 -25 VGS (V) FIGURE 2. TYPICAL SEE SIGNATURE CURVE -30 FSPYC260R, FSPYC260F Performance Curves Unless Otherwise Specified (Continued) 70 LIMITING INDUCTANCE (HENRY) 1E-3 60 ID , DRAIN (A) 1E-4 ILM = 10A 30A 1E-5 100A 300A 50 40 30 20 1E-6 10 0 -50 1E-7 30 10 100 300 1000 0 50 150 100 TC , CASE TEMPERATURE (oC) DRAIN SUPPLY (V) FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 500 ID , DRAIN CURRENT (A) 100 12V QG 100µs 10 1ms 1 0.1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 QGS 10 QGD VG 500 100 VDS , DRAIN TO SOURCE VOLTAGE (V) CHARGE FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. BASIC GATE CHARGE WAVEFORM 2.5 200 ID, DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 250ms, VGS = 12V, ID = 37A NORMALIZED rDS(ON) 2.0 1.5 1.0 0.5 0.0 -80 DESCENDING ORDER VGS = 14V VGS = 12V VGS = 10V VGS = 8V 160 120 80 40 VGS = 6V 0 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 4 0 2 4 6 8 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS 10 FSPYC260R, FSPYC260F NORMALIZED THERMAL RESPONSE (ZθJC) Performance Curves Unless Otherwise Specified (Continued) 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 t1 t2 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE IAS , AVALANCHE CURRENT (A) 300 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.001 0.01 0.1 1 10 tAV , TIME IN AVALANCHE (ms) FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L BVDSS + CURRENT I TRANSFORMER AS tP - VARY tP TO OBTAIN REQUIRED PEAK IAS VDD DUT tP VDD + 50Ω VGS ≤ 20V 0V VDS IAS 50V-150V 50Ω tAV FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT 5 FIGURE 12. UNCLAMPED ENERGY WAVEFORMS FSPYC260R, FSPYC260F Test Circuits and Waveforms (Continued) tON tOFF td(ON) VDD td(OFF) tr VDS RL tf 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±30V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID ±20% (Note 8) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Unclamped Inductive Switching VGS(PEAK) = 20V, L = 0.1mH; Limit = 110A VGS(PEAK) = 20V, L = 0.1mH; Limit = 110A Thermal Response tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV tH = 10ms; VH = 25V; IH = 4A; LIMIT = 55mV Gate Stress VGS = 45V, t = 250µs VGS = 45V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = 160V, t = 10ms 1.25 A Thermal Impedance ∆VSD tH = 500ms; VH =20V; IH = 4A HEAT SINK REQUIRED 115 mV 6 FSPYC260R, FSPYC260F Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent Class S - Equivalents 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE 1. RAD HARD “S” EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. SEM Photos and Report E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C - Attributes Data Sheet - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) G. Group D - Attributes Data Sheet - Pre and Post RAD Read and Record Data F. Group A G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL DATA PACKAGE A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Subgroups C1, C2, C3 and C6 Data I. Group D 7 - Attributes Data Sheet - Attributes Data Sheet - Pre and Post Radiation Data FSPYC260R, FSPYC260F SMD2 3 PAD CERAMIC LEADLESS CHIP CARRIER INCHES E MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.130 0.142 3.30 3.60 3 D b 0.135 0.145 3.43 3.68 - D 0.520 0.530 13.20 13.46 - D1 0.435 0.445 11.05 11.30 - D2 0.115 0.125 2.92 3.17 - E 0.685 0.695 17.40 17.65 - E1 0.470 0.480 11.94 12.19 - E2 0.152 0.162 3.86 4.11 - NOTES: A 1. 2. 3. 4. E2 E1 No current JEDEC outline for this package. Controlling dimension: INCH. Measurement prior to pre-solder coating the mounting pads. Revision 3 dated 5-00. 2 D1 D2 3 1 b 1 - GATE 2 - SOURCE 3 - DRAIN All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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